Influence of dephasing relaxation on the transient properties of parametric four-wave mixing

1984 ◽  
Vol 34 (2) ◽  
pp. 55-61 ◽  
Author(s):  
J. G. Fujimoto ◽  
T. K. Yee
Keyword(s):  
Four Wave Mixing ◽  
Wave Mixing

All‐optical reconfigurable multicast canonical logic units based on four‐wave mixing

2017 ◽  
Vol 53 (19) ◽  
pp. 1321-1323 ◽  
Author(s):  
Wenchan Dong ◽  
Jie Hou ◽  
Xinliang Zhang
Keyword(s):  
Four Wave Mixing ◽  
Wave Mixing ◽  
All Optical

scholarly journals Highly efficient THz four-wave mixing in doped silicon

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Nils Dessmann ◽  
Nguyen H. Le ◽  
Viktoria Eless ◽  
Steven Chick ◽  
Kamyar Saeedi ◽  
...  
Keyword(s):  
Four Wave Mixing ◽  
Wave Mixing ◽  
Optical Nonlinearities ◽  
Third Order ◽  
Picosecond Pulses ◽  
Light Pulses ◽  
A Value ◽  
Doped Silicon ◽  
Perturbative Regime ◽  
Silicon Doped

AbstractThird-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

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