Computer simulation of low-energy sputtering in the binary collision approximation

1979 ◽  
Vol 18 (4) ◽  
pp. 381-389 ◽  
Author(s):  
M. Hou ◽  
M. T. Robinson
Keyword(s):  
Computer Simulation ◽  
Binary Collision ◽  
Low Energy ◽  
Binary Collision Approximation ◽  
Collision Approximation

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

2011 ◽  
Vol 679-680 ◽  
pp. 421-424 ◽  
Author(s):  
Giorgio Lulli ◽  
Roberta Nipoti
Keyword(s):  
Computer Simulation ◽  
Monte Carlo ◽  
Binary Collision ◽  
Binary Collision Approximation ◽  
2D Simulation ◽  
Simulation Based ◽  
Sio2 Mask ◽  
Sic Wafer ◽  
Collision Approximation ◽  
Peak Value

In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary collision approximation (MC–BCA). Results indicate that a small fraction of ions, implanted normal to a (0001) 4H-SiC wafer (8° off-axis towards the {11-20}), is scattered and become channeled in the <1120> directions perpendicular to the <0001> axis. Due to this phenomenon, doped regions with concentration ≤ 10− 4 of the peak value, may extend laterally for a few µm below the edge of a SiO2 mask.

THE COLLIDING PARTICLES MASS RATIO INFLUENCE ON PECULIARITIES OF LOW-ENERGY ION NEAR-SURFACE IMPLANTATION AT CHANNELING CONDITIONS

2018 ◽  
Vol 20 (4) ◽  
pp. 265-274
Author(s):  
F.F. Umarov ◽  
A.M. Rasulov ◽  
A.A. Dzhurakhalov
Keyword(s):  
Energy Loss ◽  
Normal Incidence ◽  
Binary Collision ◽  
Low Energy ◽  
Main Peak ◽  
Mass Ratio ◽  
Near Surface ◽  
Collision Approximation ◽  
Thin Crystal ◽  
Depth Distributions

In the present work the peculiarities of ion implantation and colliding particles mass ratio influence on the ranges, energy loss and profiles of distribution for 1−5 keV P+ ions channelling in Si(110) and SiC(110) at normal incidence, and 1 keV Be+ and Se+ ions in GaAs(100), as well as 5 keV Ar+ and Kr+ on Cu(001) surface at glancing incidence are carried out by computer simulation in binary collision approximation. It is shown that for paraxial part of a beam the main contribution to the total energy loss comes from inelastic ones. It has been established that the energy loss of ions transmitted through thin crystal and depth profile distributions depend on width of the channel and mass ratio of colliding atoms. It was shown that at grazing surface channeling conditions the main peak of the implanted depth distributions is considerably shallow, the range for Se+ ions is shallower and the half-width of profile for these ions is narrow than that for Be+ ions. The results allow one to select the optimum for implanted depth distributions with demanded shape at narrow near-surface area of crystals obtaining.

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