2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions
2011 ◽
Vol 679-680
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pp. 421-424
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Keyword(s):
In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary collision approximation (MC–BCA). Results indicate that a small fraction of ions, implanted normal to a (0001) 4H-SiC wafer (8° off-axis towards the {11-20}), is scattered and become channeled in the <1120> directions perpendicular to the <0001> axis. Due to this phenomenon, doped regions with concentration ≤ 10− 4 of the peak value, may extend laterally for a few µm below the edge of a SiO2 mask.
2001 ◽
Vol 353-356
◽
pp. 599-602
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2012 ◽
Vol 231
(8)
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pp. 3211-3227
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Keyword(s):
2020 ◽
pp. 595-619
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2019 ◽
Vol 33
(10)
◽
pp. 1950085
2011 ◽
Vol 415
(1)
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pp. S208-S211
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