A calorimetric investigation of the low-temperature radiation damage suffered by titanium diboride

1976 ◽  
Vol 15 (4) ◽  
pp. 300-303
Author(s):  
L. S. Topchyan ◽  
V. V. Ogorodnikov ◽  
V. V. Petrosyan ◽  
L. M. Murzin
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Titanium Diboride ◽  
Calorimetric Investigation ◽  
Temperature Radiation

Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

1985 ◽  
Vol 15 (6) ◽  
pp. 1237-1247 ◽  
Author(s):  
A Audouard ◽  
A Benyagoub ◽  
L Thome ◽  
J Chaumont
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Temperature Radiation

Low-temperature radiation damage in silicon

Physica B+C ◽  
1987 ◽  
Vol 144 (3) ◽  
pp. 341-350
Author(s):  
O.O. Awadelkarim
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Temperature Radiation

Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability

2005 ◽  
Vol 108-109 ◽  
pp. 419-424
Author(s):  
Pavel Hazdra ◽  
Jan Vobecký
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Helium Ions ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Radiation Enhanced Diffusion ◽  
Helium Implantation ◽  
Temperature Radiation ◽  
Higher Doses ◽  
Different Doses

The in-diffusion of platinum into a low-doped n-type float zone silicon guided and enhanced by radiation damage produced by co-implantation of helium ions was investigated. The implantation of 1 MeV platinum ions at different doses ranging from 5×1011 to 3×1014 cm-2 was used to produce a finite source for platinum diffusion. Single and multiple energy implantation of helium ions with energies 7, 9, 11 and 13 MeV and doses from 5×1011 to 1×1013 cm-2 were applied to enhance and shape the diffusion of platinum atoms performed by 20 minutes annealing at 725°C in vacuum. Results show that diffusion of platinum at these conditions is fast enough to reach an equilibrium decoration of vacancy-related defects up to the depth of hundred micrometers. Analysis of the resulting platinum profiles indicates, that transformation of diffusing platinum interstitials to stable substitutional position is mainly given by Frank-Turnbull mechanism controlled by vacancy-related defects while the kick-out mechanism may play role at the peak of the radiation damage and at higher doses of helium implantation (>1012 cm-2). It is also shown that an extra annealing performed prior to helium implantation substantially increases the amount and localization of in-diffused platinum.

Precision Dosimetry System Suited for Low Temperature Radiation Damage Experiments

1967 ◽  
Vol 38 (4) ◽  
pp. 511-513 ◽  
Author(s):  
H. H. Andersen ◽  
C. C. Hanke ◽  
H. So/rensen
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Dosimetry System ◽  
Temperature Radiation

Mössbauer studies of low-temperature radiation damage in α-iron

1973 ◽  
Vol 59 (1) ◽  
pp. 107-120 ◽  
Author(s):  
G. Vogl ◽  
A. Schaefer ◽  
W. Mansel ◽  
J. Prechtel ◽  
W. Vogl
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Mössbauer Studies ◽  
Temperature Radiation
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