Finite element, least squares and domains decomposition methods for the numerical solution of nonlinear problems in fluid dynamics

Author(s):  
R. Glowinski ◽  
J. Periaux
VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 79-84 ◽  
Author(s):  
Min Shen ◽  
Ming-C. Cheng ◽  
J. J. Liou

A finite element method based on the least-squares scheme is developed for hydrodynamic simulation of two-dimensional short-channel semiconductor devices. Although this general-purpose finite element method has been shown in fluid dynamics to be more universal to flow problems than other finite element approaches and has been applied in recent years to a wide range of problems in fluid dynamics, it is still unfamiliar to the semiconductor device community. Application of the developed hydrodynamic least squares finite element method (LSFEM) to simulation of a 2D MESFET with a deep-submicron gate has demonstrated its robustness and effectiveness for the hydrodynamic device simulation.


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