Ab initio calculation of the structure and dynamics of III–V semiconductor surfaces

Author(s):  
J. Fritsch ◽  
C. Eckl ◽  
P. Pavone ◽  
U. Schröder

1997 ◽  
Vol 104 (4) ◽  
pp. 715-720 ◽  
Author(s):  
C. Eckl ◽  
R. Honke ◽  
J. Fritsch ◽  
P. Pavone ◽  
U. Schröder


2015 ◽  
Vol 118 (6) ◽  
pp. 939-942
Author(s):  
V. A. Chernyshev ◽  
V. P. Petrov ◽  
A. E. Nikiforov ◽  
D. O. Zakir’yanov


2017 ◽  
Vol 59 (1) ◽  
pp. 126-131 ◽  
Author(s):  
D. V. Nazipov ◽  
A. E. Nikiforov


1985 ◽  
Vol 46 (12) ◽  
pp. 2197-2202 ◽  
Author(s):  
G.J. Vázquez ◽  
L.F. Magaña






Author(s):  
Oleg Polyansky ◽  
Nikolay Zobov ◽  
Andrey Yachmenev ◽  
Sergei Yurchenko ◽  
Jonathan Tennyson ◽  
...  


2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.



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