The phase diagrams of beryllium and magnesium oxide at megabar pressures

We perform ab initio simulations of beryllium (Be) and magnesium oxide (MgO) at megabar pressures and compare their structural and thermodynamic properties. We make a detailed comparison of our two recently derived phase diagrams of Be [Wu et al., Phys. Rev. B 104, 014103 (2021)] and MgO [Soubiran and Militzer, Phys. Rev. Lett. 125, 175701 (2020)] using the thermodynamic integration technique, as they exhibit striking similarities regarding their shape. We explore whether the Lindemann criterion can explain the melting temperatures of these materials through the calculation of the Debye temperature at high pressure. From our free energy calculations, we obtained a melting curve for Be that is well represented by the fit Tm(P) = 1564K*[1 + P/(15.8037 GPa)]^0.414 , and a melting line of MgO, which can be well reproduced by the fit Tm(P) = 3010K*(1 + P/a)^(1/c) with a = 10.5797 GPa and c = 2.8683 for the B1 phase and a = 26.1163 GPa and c = 2.2426 for the B2 phase. Both materials exhibit negative Clapeyron slopes on the boundaries between the two solid phases that are strongly affected by anharmonic effects, which also influences the location of the solid-solid-liquid triple point. We find that the quasi-harmonic approximation underestimates the stability range of the low-pressure phases, namely hcp for Be and B1 for MgO. We also compute the phonon dispersion relations at low and high pressure for each of the phases of these materials, and also explore how the phonon density of states is modified by temperature. Finally, we derive secondary shock Hugoniot curves in addition to the principal Hugoniot curve for both materials, and study their offsets in pressure between solid and liquid branches.

First-principles study of stability and electronic properties of single-element 2D materials

We have estimated stability of single-element 2D materials (C2, N2, Si2, P2, Ge2, As2, Sn2, Sb2, Pb2, and Bi2) by ab initio calculations. The calculations of structural and mechanical properties of 2D materials were performed using the VASP software package. The results of calculations of stiffness tensors, Young's modulus, and Poisson's ratios show that all studied single-element 2D materials are mechanically stable. Dynamic stability was investigated by calculating the phonon dispersion of the materials using the finite displacement method. Only Pb2 has imaginary modes in the phonon dispersion curves and therefore it has dynamic unstable structure at low temperatures. The analysis of the band structures indicates the presence of insulators (N2), semiconductors (P2, As2, Bi2, Sb2), semimetals, and metals among the studied group of single-element 2D materials.

Piezoelectricity in two-dimensional aluminum, boron and Janus aluminum-boron monochalcogenide monolayers

Piezoelectricity is a property of a material that converts mechanical energy into electrical energy or vice versa. It is known that group-III monochalcogenides, including GaS, GaSe, and InSe, show piezoelectricity in their monolayer form. Piezoelectric coefficients of these monolayers are the same order of magnitude as the previously discovered two-dimensional (2D) piezoelectric materials such as boron nitride (BN) and molybdenum disulfide (MoS2) monolayers. Considering a series of monolayer monochalcogenide structures including boron and aluminum (MX, M =B, Al, X = O, S, Se, Te), we design a series of derivative Janus structures (AlBX2, X = O, S, Se, Te). Ab-initio density functional theory (DFT) and density functional perturbation theory (DFPT) calculations are carried out systematically to predict their structural, electronic, electromechanical and phonon dispersion properties. The electronic band structure analysis indicate that all these 2D materials are semiconductors. The absence of imaginary phonon frequencies in phonon dispersion curves demonstrate that the systems are dynamically stable. In addition, this study shows that these materials exhibit outstanding piezoelectric properties. For AlBO2 monolayer with the relaxed-ion piezoelectric coefficients, d11=15.89(15.87) pm/V and d31=0.52(0.44) pm/V, the strongest piezoelectric properties were obtained. It has large in-plane and out-of-plane piezoelectric coefficients that are comparable to or larger than those of previously reported non-Janus monolayer structures such as MoS2 and GaSe, and also Janus monolayer structures including: In2SSe, Te2Se, MoSeTe, InSeO, SbTeI, and ZrSTe. These results, together with the fact that a lot of similar 2D systems have been synthesized so far, demonstrate the great potential of these materials in nanoscale electromechanical applications.

Mode Coupling at around M-Point in PZT

The question of the microscopic origin of the M-superstructure and additional satellite peaks in the Zr-rich lead zirconate-titanate is discussed for nearly 50 years. Clear contradiction between the selection rules of the critical scattering and the superstructure was found preventing unambiguous attributing of the observed superstructure either to the rotation of the oxygen octahedra or to the antiparallel displacements of the lead cations. Detailed analysis of the satellite pattern explained it as the result of the incommensurate phase transition rather than antiphase domains. Critical dynamics is the key point for the formulated problems. Recently, the oxygen tilt soft mode in the PbZr0.976Ti0.024O3 (PZT2.4) was found. But this does not resolve the extinction rules contradiction. The results of the inelastic X-ray scattering study of the phonon spectra of PZT2.4 around M-point are reported. Strong coupling between the lead and oxygen modes resulting in mode anticrossing and creation of the wide flat part in the lowest phonon dispersion curves is identified. This flat part corresponds to the mixture of the displacements of the lead and oxygen ions and can be an explanation of the extinction rules contradiction. Moreover, a flat dispersion surface is a typical prerequisite for the incommensurate phase transition.

Polaron Models with Regular Interactions at Strong Coupling

We study a class of polaron-type Hamiltonians with sufficiently regular form factor in the interaction term. We investigate the strong-coupling limit of the model, and prove suitable bounds on the ground state energy as a function of the total momentum of the system. These bounds agree with the semiclassical approximation to leading order. The latter corresponds here to the situation when the particle undergoes harmonic motion in a potential well whose frequency is determined by the corresponding Pekar functional. We show that for all such models the effective mass diverges in the strong coupling limit, in all spatial dimensions. Moreover, for the case when the phonon dispersion relation grows at least linearly with momentum, the bounds result in an asymptotic formula for the effective mass quotient, a quantity generalizing the usual notion of the effective mass. This asymptotic form agrees with the semiclassical Landau–Pekar formula and can be regarded as the first rigorous confirmation, in a slightly weaker sense than usually considered, of the validity of the semiclassical formula for the effective mass.

Semiconductor Two-Dimensional PdQ2 (Q=S, Se) Monolayer: Strain Modulating Electronic Band Gaps and SQ Efficiencies

We studied the physical, electronic transport and optical properties of a unique pentagonal PdQ2 (Q= S, Se) monolayers. The dynamic stability of 2D - wrinkle like - PdQ2 is proven by positive phonon frequencies in the phonon dispersion curve. The optimized structural parameters of wrinkled pentagonal PdQ2 are in good agreement with the available experimental results. The ultimate tensile strength (UTHS) was calculated and found that, penta-PdS2 monolayer can withstand up to 16% (18%) strain along x (y) direction with 3.44 GPa (3.43 GPa). While, penta-PdSe2 monolayer can withstand up to 17% (19%) strain along x (y) dirrection with 3.46 GPa (3.40 GPa). It is found that, the penta-PdQ2 monolayers has the semiconducting behavior with indirect band gap of 0.94 and 1.26 eV for 2D-PdS2 and 2D-PdSe2, respectively. More interestingly, at room temperacture, the hole mobilty (electron mobility) obtained for 2D-PdS2 and PdSe2 are 67.43 (258.06) cm2 V-1 s-1 and 1518.81 (442.49) cm2 V-1 s-1, respectively. In addition, I-V characteristics of PdSe2 monolayer show strong negative differential conductance (NDC) region near the 3.57 V. The Shockly-Queisser (SQ) effeciency prameters of PdQ2 monolayers are also explored and the highest SQ efficeinciy obtained for PdS2 is 33.93% at -5% strain and for PdSe2 is 33.94% at -2% strain. The penta-PdQ2 exhibits high optical absorption intensity in the UV region, up to 4.04 × 105 (for PdS2) and 5.28 × 105 (for PdSe2), which is suitable for applications in optoelectronic devices. Thus, the ultrathin PdQ2 monolayers could be potential material for next-generation solar-cell applications and high performance nanodevices.

Study on the Relationship between Uniaxial Strain and Critical Transition Temperature of MgB2 Based on First-principles

It has been shown that the critical transition temperature (Tc) of MgB2 superconducting materials decreases with the increase of hydrostatic pressure, but this is a comprehensive Tc change after multiaxial strain, and the influence of strain on Tc is not clearly understood. In this paper, based on the McMillan superconducting calculation formula and the first-principles density functional theory, the Tc change of MgB2 under uniaxial strain and the properties of MgB2 such as energy band, Fermi surface, differential charge density and phonon dispersion spectrum under uniaxial strain are studied, and the relationship between uniaxial strain and these properties is analyzed. The calculated Tc of MgB2 at zero strain is 38.35 K, which is in good agreement with the experimental value of 39 K. When the a-axis strain is 1%, the Tc value can be increased to 49.7 K, and there is a further improvement trend. When the a-axis compression strain is -1%, Tc decreases to 31.52 K. When the c-axis tensioncompression strain is applied, the change of Tc value is small. Further analysis shows that the influence of a-axis strain on the differential charge density, electronic band structure, phonon dispersion and other properties of MgB2 is significantly greater than that of c-axis strain, and the influence of these properties on Tc is discussed. The work in this paper has certain theoretical and guiding significance for the preparation of MgB2 with higher Tc and the study of the effect of uniaxial strain on Tc of superconducting materials.

Photoinduced anisotropic lattice dynamic response and domain formation in thermoelectric SnSe

Identifying and understanding the mechanisms behind strong phonon–phonon scattering in condensed matter systems is critical to maximizing the efficiency of thermoelectric devices. To date, the leading method to address this has been to meticulously survey the full phonon dispersion of the material in order to isolate modes with anomalously large linewidth and temperature-dependence. Here we combine quantitative MeV ultrafast electron diffraction (UED) analysis with Monte Carlo based dynamic diffraction simulation and first-principles calculations to directly unveil the soft, anharmonic lattice distortions of model thermoelectric material SnSe. A small single-crystal sample is photoexcited with ultrafast optical pulses and the soft, anharmonic lattice distortions are isolated using MeV-UED as those associated with long relaxation time and large displacements. We reveal that these modes have interlayer shear strain character, induced mainly by c-axis atomic displacements, resulting in domain formation in the transient state. These findings provide an innovative approach to identify mechanisms for ultralow and anisotropic thermal conductivity and a promising route to optimizing thermoelectric devices.