The quirk signal at FASER and FASER 2

We study FASER and FASER 2 sensitivities to the quirk signal by simulating the motions of quirks that are travelling through several infrastructures from the ATLAS interaction point to the FASER (2) detector. The ionization energy losses for a charged quirk travelling in different materials are treated carefully. We calculate the expected numbers of quirk events that can reach the FASER (2) detector for an integrated luminosity of 150 (3000) fb−1. Scenarios for quirks with four different quantum numbers, and different masses and confinement scales are studied.

Synergistic effects in MOS capacitors with an Au/HfO2-SiO2/Si structure irradiated with neutron and gamma ray

The properties of oxide trapped charges and interface state density in the metal oxide semiconductor (MOS) capacitors with an Au/HfO2-SiO2/Si structure were investigated under irradiation of 14 MeV neutron and 60Co gamma-ray. In the mixed neutron and gamma irradiation environment, the formation of the oxide trapped charges in the HfO2-SiO2 layer is determined by the total deposited ionization energy, i.e. the sum of ionization energy deposition of the neutrons and the accompanying gamma rays, while the influence of the displacement damage caused by 14 MeV neutrons can be ignored. The interface state density depends not only on the ionizing energy loss (IEL) but also the non-ionizing energy loss (NIEL), and NIEL plays a major role below the critical neutron fluence of 4.5×1012 n/cm2. The synergistic effect of the interface state is observed increases with energy deposition in the oxide at lower fluences, while decreasing above the critical fluence. These results confirm the existence of the synergistic effect of neutron and gamma irradiation in damaging HfO2 MOS devices.

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current-voltage measurements were observed to corroborate the Hall measurements in the Van der Pauw configuration. A free hole concentration of ~1.5 x 1017 cm-3 and low ionization energy of ~65 meV in Mg-doped Al0.7Ga0.3N films is demonstrated. Nearly an order of magnitude lower hydrogen concentration than Mg in the as-grown AlGaN films is thought to reduce the Mg passivation and enable higher hole concentrations in Al-rich p-AlGaN films, compared to p-GaN films. The alternate methodology proposed in this work is expected to provide a simpler pathway to evaluate the electrical characteristics of Al-rich p-AlGaN films for future III-nitride ultraviolet light emitters.

Augmented the Structure, Electronic and Optical Characteristics of PEO Doped NiO for Electronics Applications

This paper aims to investigate the structural, optical and electrical properties of PEO doped with NiO. The DFT calculations have been performed using Gaussian 09 package of programs. The calculated electronic properties included the total energy, HOMO and LUMO energies, energy gap, ionization energy, electron affinity, electronegativity, electrochemical hardness, electronic softness and electrophilic index. The obtained results showed that the doping PEO with NiO improved the structural, optical, electronic and electrical characteristics where the energy band gap decreases about 67.4% with addition of NiO which make the (PEO-NiO) composites are promising materials for flexible optoelectronics fields in the development of electronics applications.

Superalkalis as Building Block for Efficient Lewis Base

In quest for efficient Lewis base an in-silico investigation on NH3 and its structurally similar different molecules have been carried out. It has been observed that the ionization energy of the groups attached to N-centre play an important role in determining their stability and reactivity. Among different groups, superalkali ligands make better Lewis base. Several conceptual DFT descriptors like electrophilicity, nucleophilicity, dual descriptors have been used to analyse the stability and reactivity of proposed Lewis base. Calculated charge transfer descriptor describes the efficiency of the designed Lewis base to form an adduct with Lewis acid. nc-2e (n=1,2) AdNDP calculation lend additional support to the bonding of the studied molecules.