Formability and mechanism of pulsed current pretreatment–assisted laser impact microforming

2021 ◽  
Author(s):  
Haokun Zhang ◽  
Xiao Wang ◽  
Youjuan Ma ◽  
Xin Gu ◽  
Jiaxin Lu ◽  
...  
Keyword(s):  
Pulsed Current ◽  
Laser Impact

High voltage pulsed current in pressure ulcer healing: results of a randomized, controlled trial – preliminary study

Leczenie Ran ◽  
2013 ◽  
Vol 10 (1) ◽  
pp. 13-22 ◽  
Author(s):  
Anna Polak ◽  
Anna Walczak ◽  
Jakub Taradaj ◽  
Marzena Dzikiewicz ◽  
Aldona Augustak ◽  
...  
Keyword(s):  
Randomized Controlled Trial ◽  
Pressure Ulcer ◽  
High Voltage ◽  
Ulcer Healing ◽  
Controlled Trial ◽  
Pulsed Current ◽  
Randomized Controlled ◽  
Preliminary Study

Fracture toughness of MAG welds in pulsed current of API 5L AX65M thermomechanical treated steel

2020 ◽  
Vol 62 (3) ◽  
pp. 304-310
Author(s):  
Ion Mitelea ◽  
Dinu Simionescu ◽  
Corneliu Marius Crăciunescu ◽  
Ion Dragoş Uţu
Keyword(s):  
Fracture Toughness ◽  
Pulsed Current ◽  
Treated Steel

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

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