PULSED CURRENT VOLTAGE CHARACTERISTICS OF A THERMALLY PRODUCED PLASMA

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-491-C7-492
Author(s):  
N. St. J. Braithwaite ◽  
J. E. Allen
2011 ◽  
Vol 119 (2) ◽  
pp. 196-198 ◽  
Author(s):  
T. Laurent ◽  
R. Sharma ◽  
J. Torres ◽  
P. Nouvel ◽  
S. Blin ◽  
...  

2021 ◽  
Vol 2096 (1) ◽  
pp. 012061
Author(s):  
V V Ivonin

Abstract The article presents the results of laboratory studies of nonlinear processes during the flow of pulsed currents into moistened soil from electrodes modelling grounding devices of electric power facilities. A methodology for studying the pulse parameters of grounding devices has been developed and a laboratory stand and a generator measuring system have been developed on which these investigation were performed. The experiments were carried out on three types of electrodes at voltages of 20 - 50 kV and pulse durations from units to hundreds of microseconds. The article presents the combined results of optical and oscillographic studies. It is shown that the cause of the formation of spark channels during the nonlinear spreading of the pulsed current in the soil, when there is a sharp decrease in the grounding resistance, is the ionization-overheating instability that occurs when the current density on the electrode is greater than the critical one. The development of instability leads to an inhomogeneous current distribution and the appearance of spark channels. On the basis of experimental data, the current-voltage characteristics of the electrodes are obtained.


Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.


2021 ◽  
Vol 60 (1) ◽  
pp. 011003
Author(s):  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Young Taek Oh ◽  
Jiyeon Ma ◽  
Junseok Heo ◽  
...  

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