Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Conductive AFM: Probing Nano-scale Electrical Properties of Model Cell Membranes

2012 ◽  
Vol 1465 ◽  
Author(s):  
Paul Farrar ◽  
Del Atkinson ◽  
Andrew J. Gallant
Keyword(s):  
Lipid Bilayers ◽  
Electrical Contact ◽  
Pyrolytic Graphite ◽  
Elastic Response ◽  
Electrical Measurements ◽  
Contact Mode ◽  
Biologically Relevant ◽  
Atomic Force ◽  
Current Voltage ◽  
Model Cell

ABSTRACTBiologically relevant lipid bilayers supported on highly ordered pyrolytic graphite (HOPG) were probed both mechanically and electrically with a Conductive Atomic Force Microscope (C-AFM) capable of measuring ultra-low currents. Results show that these membranes undergo an elastic response up to 26 nN on average when compressed with an AFM tip. Measuring the films with a low contact force demonstrates that contact mode AFM can be used repeatedly to image without damaging the film. Based on current-voltage measurements made with the C-AFM, it is shown that apparently high resistances seen for the films could be the result of variable electrical contact between the tip and surface. As a result, the paper proposes that the deflection of the cantilever should always be measured in order to ensure knowledge of the location of the tip during all electrical measurements.

scholarly journals Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

2021 ◽  
Author(s):  
EMINE ALDIRMAZ ◽  
M. Güler ◽  
E. Güler
Keyword(s):  
Room Temperature ◽  
Schottky Contact ◽  
Phase Identification ◽  
Frequency Interval ◽  
Electrical Measurements ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Type Semiconductor ◽  
Diode Current

Abstract In this study, the Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy was used. Phase identification was performed with the Scanning electron microscope (SEM), and energy-dispersive X-ray (EDX). We observed in the austenite phase in Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy. To produce a new Schottky diode, CuZnAlMn alloy was exploited as a Schottky contact on p-type semiconductor silicon substrate. To calculate the characteristics of the produced diode, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) analyzes were taken at room temperature (300 K), in the dark and under various lights. Using electrical measurements, the diode's ideality factor (n), barrier height (Φb), and other diode parameters were calculated. Besides, the conductance / capacitance-voltage (G/C-V) characteristics of the diode were studied and in a wide frequency interval at room temperature. Also, the capacitance and conductance values strongly ​​ rely on the frequency. From the present experimental results, the obtained diode can be used for optoelectronic devices.

Advanced Electrical Characterization of 90 nm Soft Bit Failure by Nano Probing Technique

2005 ◽  
Author(s):  
Christelle Giret ◽  
Damien Faure
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Electrical Measurements ◽  
Device Failure ◽  
Sram Cell ◽  
Visual Defects ◽  
Difficult Challenge ◽  
Type Of Failure

Abstract The Soft Bit failure (Single Bit Failure sensitive to voltage) of a 90nm SRAM cell presented a difficult challenge for the Failure Analysis (FA) group. Physical analysis of these Soft SRAM failures did not show any visual defects; therefore the FA required an accurate electrical characterization. The transistor characteristics of the failing SRAM transistors are needed in order to speculate on the possible failure mechanism. The Nano-Probing technique performed at Nice Device Failure Analysis of Laboratory (NDAL) allowed us to identify anomalies of I/V characteristics like Vt imbalance, low Gain, asymmetrical Vt, ID (Drive current) and Ron. Case studies of an asymmetry phenomenon reported here lead to a correlation between the failure mode and the electrical measurements. This paper demonstrates a suitable electrical methodology and characterization by Nano-Probing in order to successfully manage a FA approach on this type of failure.

scholarly journals ELECTRONIC PROPERTIES OF THIN FILMS SUBLIMED FROM La@C82 AND Li@C60

NANO ◽  
2008 ◽  
Vol 03 (03) ◽  
pp. 155-160 ◽  
Author(s):  
V. N. POPOK ◽  
A. V. GROMOV ◽  
M. JÖNSSON ◽  
A. TANINAKA ◽  
H. SHINOHARA ◽  
...  
Keyword(s):  
Thin Films ◽  
Elevated Temperatures ◽  
Film Structure ◽  
Ambient Atmosphere ◽  
Room Temperature Resistivity ◽  
Electrical Measurements ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Temperature Dependences

La @ C 82 and Li @ C 60 thin films obtained by sublimation in vacuum are studied using four-probe current–voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21 ± 8 and 1230 ± 50 Ω · cm for the La @ C 82 and Li @ C 60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li @ C 60 film structure increasing the film resistivity to values typical for C 60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

Improved Characterization of high-k Degradation with Vacuum C-AFM

2008 ◽  
Vol 1074 ◽  
Author(s):  
Wouter Polspoel ◽  
Wilfried Vandervorst ◽  
Lidia Aguilera ◽  
Marc Porti ◽  
Montserrat Nafria ◽  
...  
Keyword(s):  
High Vacuum ◽  
Electrical Measurements ◽  
Conductive Atomic Force Microscopy ◽  
Oxide Breakdown ◽  
Force Microscopy ◽  
Technology Roadmap ◽  
Mos Devices ◽  
Atomic Force ◽  
High K ◽  
Trap Assisted Tunneling

ABSTRACTLocal phenomena like trap assisted tunneling and oxide breakdown (BD) in new high-k gate oxides in advanced MOS devices hinder the acquisition of device requirements stated in the International Technology Roadmap for Semiconductors (ITRS). Conductive Atomic Force Microscopy (C-AFM) visualizes these local phenomena by measuring the local tunneling through the dielectric. In the first part of this work we show that the physical composition of surface protrusions, that are produced at sites electrically stressed with C-AFM and that distort the electrical measurements, is oxidized Si. In the second part, we illustrate that C-AFM measurements become more reliable in high vacuum (1e−5torr) as surface (oxidized Si protrusions) and tip damage is reduced. Finally, we illustrate good agreement between conventional macroscopic electrical measurements and nanometer-scale C-AFM measurements on normal and gate – removed high-k capacitors, respectively. Moreover, to illustrate the strength of the local tunneling technique, we show the possibility of locating BD spots on a high-k capacitor.

Frequency Sensitive Soft Fails in SRAM Arrays

2010 ◽  
Author(s):  
Sweta Pendyala ◽  
Terence Kane ◽  
Michael Tenney ◽  
Richard Oldrey ◽  
Manuel Villalobos ◽  
...  
Keyword(s):  
Paradigm Shift ◽  
Capacitance Measurement ◽  
Physical Analysis ◽  
Voltage Measurement ◽  
Electrical Measurements ◽  
Root Cause ◽  
Atomic Force ◽  
Capacitance Voltage ◽  
First Time

Abstract Root cause analysis of frequency sensitive “soft” failures in SRAM arrays pose unusual challenges to the failure analyst. Conventional atomic force probe (AFP) DC measurements cannot reliably identify the failure source. The employment of tester based schmoo screening have been shown to correlate with AFP AC quantitative capacitance measurements for the first time. The technique of Nanoprobe Capacitance-Voltage Spectroscopy (NCVS) at contact level (CA) for localization has been previously described [1,2,3]. By exploiting the dC/dV component of the NCVS signal shown in Figure 1 and integrating this output, a quantitative capacitance versus voltage measurement can be demonstrated. This quantitative capacitance measurement identified a frequency sensitve horizontal pair failure (HPF) in the SRAM array. Subsequent process vintage analysis identified the source and eliminated these frequency sensitive HPF characterisics. Given the sensitive nature of these fails, conventional physical analysis methods of TEM EELS, and cross section scanning capacitance analysis were not successful in finding the root cause. This underlies a paradigm shift in failure analysis. Electrical measurements may be the only means to identify a process problem and follow-up process vintage analysis is required to solution the root cause.

Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes

2009 ◽  
Vol 156-158 ◽  
pp. 331-336 ◽  
Author(s):  
Jens Eriksson ◽  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Stefano Leone ◽  
...  
Keyword(s):  
Contact Area ◽  
Schottky Diodes ◽  
Electrical Current ◽  
Contact Radius ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage

The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.

scholarly journals Role of interfacial layer thickness on high-κ dielectric-based MOS devices

2014 ◽  
Vol 04 (03) ◽  
pp. 1450023 ◽  
Author(s):  
C. Chakraborty
Keyword(s):  
Interfacial Layer ◽  
Oxide Semiconductor ◽  
Mos Devices ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Change ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Substrate Temperatures

An attempt has been made to investigate the role of interfacial layer (IL) and its thickness on HfO 2-based high-κ metal-oxide-semiconductor (MOS) devices. The capacitance–voltage (C–V) and current–voltage (I–V) characteristics have been simulated using Sentaurus TCAD software for two different IL thicknesses and at different substrate temperatures and doping concentrations. The device performance is found to be improved for an IL thickness of 1 nm at higher temperature but deteriorates with further increase in IL thickness. The capacitance value decreases with the increase in IL thickness and a flatband voltage shift (V fb ) due to the presence of interfacial charges at IL of higher thickness is observed. The analysis of I–V curve further shows that the leakage current change is more prominent at lower temperature for different IL thickness. The temperature dependence C–V curves show that the presence of 1 nm IL makes the device more reliable at elevated temperature.

Electrical and Chemical Characterization of Contacts to Silicon Carbide

1992 ◽  
Vol 242 ◽  
Author(s):  
Jeremy B. Petit ◽  
Mary V. Zeller
Keyword(s):  
Heat Treatment ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Characterization ◽  
Electrical Measurements ◽  
Interface Reactions ◽  
Electrical Studies ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTChemical and electrical studies were performed to determine the characteristics of contacts to 6H-SiC. Both elemental metals (Ni, Mo) and suicides (MoSi2, TaSi2, TiSi2) were studied. Chemical analysis by Auger Electron Spectroscopy (AES) was performed to examine interface reactions caused by heat treatment. Electrical measurements (current-voltage and capacitance-voltage) were made during annealing sequences to determine the rectifying or ohmic characteristics of the contacts. Where possible, barrier height and contact resistance values were calculated.

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