The local-field correction for the interacting electron gas: many-body effects for unpolarized and polarized electrons

1997 ◽  
Vol 103 (3) ◽  
pp. 491-500 ◽  
Author(s):  
A. Gold
2020 ◽  
Vol 30 (2) ◽  
pp. 123
Author(s):  
Van Tuan Truong ◽  
Quoc Khanh Nguyen ◽  
Van Tai Vo ◽  
Khan Linh Dang

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.


1998 ◽  
Vol 57 (19) ◽  
pp. 12056-12068 ◽  
Author(s):  
Jener J. S. Brito

2014 ◽  
Vol 90 (20) ◽  
Author(s):  
Sanjeev Kumar ◽  
Kalarikad J. Thomas ◽  
Luke W. Smith ◽  
Michael Pepper ◽  
Graham L. Creeth ◽  
...  

The theory previously developed and applied to calculate the correlation energy of a free-electron gas is extended in this paper to calculate the energy of an electron gas in a potential field. Two new features arise: (i) the introduction of a self-consistent field which is a generalization of the ordinary Hartree field; (ii) the occurrence of ‘local field correction’ effects. It is shown that the energy of the gas can be expressed in terms of the eigenvalues of a certain homogeneous integral equation and a stationary principle for these eigenvalues is given. The theory is applied to crystals and an approximate expression for the correlation energy of a metal is derived neglecting Lorentz-Lorenz corrections effects.


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