charged impurity
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Author(s):  
S.R. Figarova ◽  
◽  
V.R. Figarov ◽  

The influence of interband and intraband transitions on oscillations of the vertical conductivity of superlattices in a strong magnetic field is considered. It was found that for the charged impurity scattering intraband transitions dominate in magnetic fields up to 2 T, and with a further increase in the magnetic field, interband transitions control. The conductivity oscillations are determined by a ratio of the magnetic length to the superlattice period and the effective mass anisotropy.


2020 ◽  
Vol 34 (27) ◽  
pp. 2050254
Author(s):  
Dang Khanh Linh ◽  
Nguyen Quoc Khanh

We consider a double-layer system made of two parallel bilayer graphene sheets separated by a dielectric medium. We calculate the finite-temperature electrical conductivity of the first layer due to charged impurities located in two layers. We study the effects of temperature, interlayer distance, dielectric constants and impurity concentration, carrier concentration on the electrical conductivity. We show the importance of charged impurities located in layer II in determining electrical conductivity of the first layer for small interlayer distance. The results in this paper give us more understanding about the long-range charged impurity scattering in bilayer graphene under the effect of the second one.


2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Henrik Hirzler ◽  
Eleanor Trimby ◽  
Rianne S. Lous ◽  
Gerrit C. Groenenboom ◽  
Rene Gerritsma ◽  
...  
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2020 ◽  
Vol 30 (2) ◽  
pp. 123
Author(s):  
Van Tuan Truong ◽  
Quoc Khanh Nguyen ◽  
Van Tai Vo ◽  
Khan Linh Dang

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.


2D Materials ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 031003
Author(s):  
K A Cochrane ◽  
T Zhang ◽  
A Kozhakhmetov ◽  
J-H Lee ◽  
F Zhang ◽  
...  

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