Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I
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Published By Springer Berlin Heidelberg

9783642639937, 9783642594847

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Novel Observation of Magnetic-Field induced Metal-Insulator Transition in n-GaAs through Far-Infrared Photoconductivity Measurements

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_95 ◽

2001 ◽

pp. 214-215

Author(s):

H. Kobori ◽

M. Inoue ◽

T. Ohyama

Keyword(s):

Magnetic Field ◽

Far Infrared ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator

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Two-color time-resolved electronic Raman measurement in semiconductors

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_91 ◽

2001 ◽

pp. 206-207

Author(s):

Shingo Saito ◽

Tohru Suemoto

Keyword(s):

Time Resolved ◽

Raman Measurement

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A novel biexcitonic, non-radiative electron-hole recombination mechanism and its application in hydrogenated silicon semiconductors

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_80 ◽

2001 ◽

pp. 184-185

Author(s):

S. B. Zhang ◽

Howard M. Branz

Keyword(s):

Electron Hole ◽

Recombination Mechanism ◽

Hydrogenated Silicon ◽

Hole Recombination

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The influence of the temperature in the scattering mechanisms in pure GaSb

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_75 ◽

2001 ◽

pp. 172-173 ◽

Cited By ~ 1

Author(s):

L. G. O. Messias ◽

E. Marega

Keyword(s):

Scattering Mechanisms

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Monte Carlo Simulation of Temperature- and Field-dependent Impact Ionization for GaAs

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_70 ◽

2001 ◽

pp. 162-163

Author(s):

H. K. Jung ◽

S. W. Ko ◽

C. K. You ◽

K. Taniguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Field Dependent

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Hybrid structures of fullerenes and single-wall carbon nanotubes

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_7 ◽

2001 ◽

pp. 24-24 ◽

Cited By ~ 1

Author(s):

S. Iijima

Keyword(s):

Carbon Nanotubes ◽

Hybrid Structures ◽

Single Wall Carbon Nanotubes ◽

Single Wall Carbon

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Boron in diamond at high concentrations

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_66 ◽

2001 ◽

pp. 154-155 ◽

Cited By ~ 2

Author(s):

M. J. R. Hoch ◽

J. E. Lowther ◽

T. Tshepe

Keyword(s):

High Concentrations

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Hot electron degradation of the extraordinary magneto-resistance in inhomogenous InSb

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_64 ◽

2001 ◽

pp. 150-151 ◽

Cited By ~ 1

Author(s):

D. Poplavskyy ◽

A. C. H. Rowe ◽

R. A. Stradling ◽

S. A. Solin

Keyword(s):

Hot Electron ◽

Magneto Resistance

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Identification of physical mechanisms of tensoeffects in highly strained Si and Ge

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_62 ◽

2001 ◽

pp. 146-147

Author(s):

S. I. Budzulyak ◽

V. M. Ermakov ◽

Yu. P. Dotsenko ◽

V. V. Kolomoets ◽

Yu. M. Shwarts ◽

...

Keyword(s):

Strained Si ◽

Physical Mechanisms ◽

Highly Strained

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Angle-resolved tunneling spectroscopy of Si conduction band using bonded Si(111) wafer pair

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_61 ◽

2001 ◽

pp. 144-145

Author(s):

A. Kazama ◽

H. Bando ◽

Y. Miyahara ◽

H. Enomoto ◽

H. Ozaki

Keyword(s):

Conduction Band ◽

Tunneling Spectroscopy ◽

Wafer Pair

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Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part ILatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Novel Observation of Magnetic-Field induced Metal-Insulator Transition in n-GaAs through Far-Infrared Photoconductivity Measurements

Two-color time-resolved electronic Raman measurement in semiconductors

A novel biexcitonic, non-radiative electron-hole recombination mechanism and its application in hydrogenated silicon semiconductors

The influence of the temperature in the scattering mechanisms in pure GaSb

Monte Carlo Simulation of Temperature- and Field-dependent Impact Ionization for GaAs

Hybrid structures of fullerenes and single-wall carbon nanotubes

Boron in diamond at high concentrations

Hot electron degradation of the extraordinary magneto-resistance in inhomogenous InSb

Identification of physical mechanisms of tensoeffects in highly strained Si and Ge

Angle-resolved tunneling spectroscopy of Si conduction band using bonded Si(111) wafer pair

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I
Latest Publications