Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects
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We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.
2013 ◽
Vol 64
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pp. 245-250
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2020 ◽
Vol 3
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2015 ◽
Vol 18
(3)
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pp. 85-92
1997 ◽
Vol 103
(3)
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pp. 491-500
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1998 ◽
Vol 10
(48)
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pp. 11025-11031
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