Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In 0.53 Ga 0.47 As/In 0.53 (Ga 0.6 Al 0.4 ) 0.47 As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

2003 ◽  
Vol 76 (6) ◽  
pp. 979-982 ◽  
Author(s):  
J.S. Yu ◽  
J.D. Song ◽  
J.M. Kim ◽  
S.J. Bae ◽  
Y.T. Lee ◽  
...  
1994 ◽  
Vol 23 (1) ◽  
pp. 1-6 ◽  
Author(s):  
K. Xie ◽  
C. R. Wie ◽  
J. A. Varriano ◽  
G. W. Wicks

2005 ◽  
Author(s):  
J. Werner ◽  
E. Kapon ◽  
A.C. Von Lehmen ◽  
R. Bhat ◽  
E. Colas ◽  
...  

2010 ◽  
Vol 19 (7) ◽  
pp. 077304 ◽  
Author(s):  
Gu Yi ◽  
Wang Kai ◽  
Li Yao-Yao ◽  
Li Cheng ◽  
Zhang Yong-Gang

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