Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In 0.53 Ga 0.47 As/In 0.53 (Ga 0.6 Al 0.4 ) 0.47 As quantum well laser structure with InGaAlAs digital alloys by thermal annealing
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2000 ◽
Vol 218
(1)
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pp. 13-18
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