We have theoretically investigated the 1.55 μm emission of p–i–n GaNAsBi-based quantum wells (QWs) using a self-consistent calculation combined with (16×16) BAC model. Their performances are evaluated in terms of spontaneous emission rate Rsp
and radiative current density Jrad. We have found that Jrad increases as function of the injected carrier density as well as the doping density. The quantum confined Stark effect on radiative current density in ideal lasers is also discussed. The radiative
current density versus well width for simple and double p-GaAs/i-GaN·58yAs1-1·58yBiy/n-GaAs quantum well structures is also examined. We have obtained that Jrad increases with increase
average thickness of GaNAsBi active region. The optimization of well parameters can be used as a basis for GaNAsBi-based lasers intended for optical fiber telecommunication wavelength.
Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure