rapid thermal annealing
Recently Published Documents


TOTAL DOCUMENTS

2433
(FIVE YEARS 149)

H-INDEX

53
(FIVE YEARS 7)

Author(s):  
Kesuke YAMANE ◽  
Ryo Futamura ◽  
Shigeto Genjo ◽  
Daiki Hamamoto ◽  
Yuito Maki ◽  
...  

Abstract This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III-V materials such as GaAs and InGaP degrade their crystal quality by irradiation damage. Atomic force microscopy and transmission electron microscopy reveal no degradation of structural defects. GaAsPN solar cell test devices are then fabricated. Results show that the conversion efficiency increases by proton/electron irradiation, which is mainly caused by an increase in the short-circuit current.


Membranes ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 49
Author(s):  
Wei-Sheng Liu ◽  
Chih-Hao Hsu ◽  
Yu Jiang ◽  
Yi-Chun Lai ◽  
Hsing-Chun Kuo

In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O2 ratio from 16% to 33% in the argon–oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar–O2 plasma–treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar–O2 plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C–300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and ION/IOFF current ratio of the 33% O2 plasma–treated DG TFT devices improved to 58.8 cm2/V·s, 0.12 V/decade, and 5.46 × 108, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.


Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Simeon Simeonov ◽  
Anna Szekeres ◽  
Dencho Spassov ◽  
Mihai Anastasescu ◽  
Ioana Stanculescu ◽  
...  

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.


2021 ◽  
Author(s):  
Zhongyunshen Zhu ◽  
Johannes Svensson ◽  
Adam Jönsson ◽  
Lars Erik Wernersson

Abstract GaSb is considered as an attractive p-type channel material for future III-V metal-oxide-semiconductor (MOS) technologies, but the processing conditions to utilize the full device potential such as low power logic applications and RF applications still need attention. In this work, applying rapid thermal annealing (RTA) to nanoscale GaSb vertical nanowire p-type MOSFETs, we have improved the average peak transconductance (g m,peak) by 50% among 28 devices and achieved 70 µS/µm at V DS = – 0.5 V in a device with 200-nm gate length. In addition, a low subthreshold swing down to 144 mV/dec as well as an off-current below 5 nA/µm which refers to the off-current specification in low-operation-power (LOP) condition has been obtained. Based on the statistical analysis, the results show a great enhancement in both on- and off-state performance with respect to previous work mainly due to the improved electrostatics and contacts after RTA, leading to a potential in low-power logic applications. We have also examined a short channel device with L g = 80 nm in RTA, which shows an increased gm,peak up to 149 µS/µm at V DS = – 0.5 V as well as a low on-resistance of 4.7 kΩ·µm. The potential of further enhancement in g m via RTA offer a good alternative to obtain high-performance devices for RF applications which have less stringent requirement for off-state performance. Our results indicate that post-fabrication annealing provides a great option to improve the performance of GaSb-based p-type devices with different structures for various applications.


Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1220
Author(s):  
Min-Sung Bae ◽  
Seoung-Hyoun Kim ◽  
Jin-Su Baek ◽  
Jung-Hyuk Koh

As a wide energy band gap semiconductor, a Ga2O3 thin film was prepared by the sol–gel process with different annealing processes. Since Ga2O3 is a type of metal oxide structure, an oxygen annealing process can be considered to remove oxygen defects. An effective oxygen annealing process can help form a β-Ga2O3 structure with reduced defects. In this study, different types of annealing effects for β-Ga2O3 were investigated and compared. An electric furnace process using thermal effect characteristics of and an Rapid Thermal Annealing (RTA) process applied with an infrared radiation light source were compared. Two and 4 h thermal annealing processes were conducted at 900 °C in the furnace. Meanwhile, to study the optical annealing effects, 2 h furnace at 900 °C + 15 min in rapid thermal annealing and only 15 min in rapid thermal annealing effects were compared, respectively. Through increasing the thermal annealing temperature and time, β-Ga2O3 can be formed even though a sol–gel process was employed in this experiment. An annealing temperature of at least 900 °C was required to form β-Ga2O3 thin film. Moreover, by introducing an RTA process just after the spinning process of thin film, a β-Ga2O3 thin film was formed on the sapphire substrates. Compared with the electric furnace process applied for 2 h, the RTA process performed in 15 min has a relatively short process time and results in similar structural and optical characteristics of a thin film. From the X-ray diffraction patterns and UV spectrometer analysis, optically annealed β-Ga2O3 thin films on the sapphire substrate showed a highly crystalized structure with a wide energy band gap of 4.8 eV.


Sign in / Sign up

Export Citation Format

Share Document