Nanosecond-time-resolution thermal emission measurement during pulsed excimer-laser interaction with materials

XeF excimer laser-induced melting and recrystallization of amorphous silicon was studied using in-situ online time-resolved reflection and transmission measurements with a nanosecond time resolution. The explosive crystallization was observed for 50nm thick amorphous silicon on SiO2 deposited on non-alkali glass substrate upon 25ns pulse duration of excimer laser. Three distinct regrowth regimes were found using various excimer laser fluences. Scanning electron microscopy, Raman spectroscopy and atomic force microscopy were used to evaluate the excimer laser- irradiated region of the sample. Grain size, surface roughness and melt duration as a function of different laser fluences are also determined.

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Noncontact nanosecond-time-resolution temperature measurement in excimer laser heating of Ni–P disk substrates

Applied Physics Letters ◽

10.1063/1.120286 ◽

1997 ◽

Vol 71 (22) ◽

pp. 3191-3193 ◽

Cited By ~ 22

Author(s):

Shaochen Chen ◽

Costas P. Grigoropoulos

Keyword(s):

Temperature Measurement ◽

Excimer Laser ◽

Time Resolution ◽

Laser Heating ◽

Nanosecond Time Resolution

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Nanosecond Time Resolution In Situ Optical Reflection and Transmission Measurements during XeF Excimer Laser Interaction with Amorphous Silicon Thin Films

Materials Science Forum - Progress on Advanced Manufacture for Micro/Nano Technology 2005 ◽

10.4028/0-87849-990-3.337 ◽

2006 ◽

pp. 337-342 ◽

Cited By ~ 2

Author(s):

Chil Chyuan Kuo ◽

W.C. Yeh ◽

C.B. Chen ◽

J.Y. Jeng

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Excimer Laser ◽

Time Resolution ◽

Reflection And Transmission ◽

Optical Reflection ◽

Silicon Thin Films ◽

Transmission Measurements ◽

Nanosecond Time Resolution

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Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

10.1115/imece2001/htd-24350 ◽

2001 ◽

Author(s):

Seung-Jae Moon ◽

Minghong Lee ◽

Costas P. Grigoropoulos

Keyword(s):

Laser Annealing ◽

Thermal Emission ◽

Electrical Conductance ◽

Nanosecond Laser ◽

Solidification Velocity ◽

Emission Measurement ◽

Excimer Laser Annealing ◽

In Situ Experiments ◽

Si Films

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.

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Excimer Laser Interaction with Metals

MRS Proceedings ◽

10.1557/proc-285-145 ◽

1992 ◽

Vol 285 ◽

Cited By ~ 3

Author(s):

W.W. Duley ◽

G. Kinsman

Keyword(s):

Experimental Data ◽

Laser Radiation ◽

Excimer Laser ◽

Metal Surfaces ◽

Laser Pulses ◽

Radiative Properties ◽

Uv Laser ◽

Laser Interaction ◽

Excimer Laser Radiation

ABSTRACTExcimer laser radiation may be used to process metal surfaces in a variety of novel ways. The simplest of these involves the use of UV laser pulses for ablation. Ablation occurs as the result of both vaporization and hydrodynamical effects. Experimental data related to these processes will be discussed. In addition, it will be shown how specific irradiation regimes can yield metal surfaces with unique radiative properties.

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