scholarly journals Correction to: Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs QuantumWell

2021 ◽  
Author(s):  
S. D. Ganichev ◽  
S. N. Danilov ◽  
M. Kronseder ◽  
D. Schuh ◽  
I. Gronwald ◽  
...  
Keyword(s):  
Electric Field ◽  
Gold Films

scholarly journals Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well

2020 ◽  
Vol 41 (8) ◽  
pp. 957-978
Author(s):  
S. D. Ganichev ◽  
S. N. Danilov ◽  
M. Kronseder ◽  
D. Schuh ◽  
I. Gronwald ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Gold Films

Current induced organization in thin nanocrystalline gold films during deposition

2001 ◽  
Vol 676 ◽  
Author(s):  
P. Chaoguang ◽  
J. Ederth ◽  
L. B. Kish ◽  
C. G. Granqvist
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Applied Electric Field ◽  
Substrate Surface ◽  
Film Structure ◽  
Gold Films ◽  
Percolation Effect ◽  
Dc Electric Field ◽  
Film Microstructure

ABSTRACTNanocrystalline gold films were prepared by advanced gas deposition. Electric field induced effects on the film structure during and after deposition was investigated. A dc electric field in the range 2 ≤Ua ≤ 8 V/cm, was applied parallel to the substrate surface and led to changes of film microstructure and resistivity. In another set of experiments, films deposited at Ua = 0 were exposed to electric fields of similar strength after deposition. Film degradation could be understood from a mechanism consistent with a biased-percolation effect. Our results show that it is possible to control the film structure by varying the strength of an applied electric field.

Electric field induced reversible tuning of resistance of thin gold films

2008 ◽  
Vol 104 (10) ◽  
pp. 103707 ◽  
Author(s):  
S. Dasgupta ◽  
R. Kruk ◽  
D. Ebke ◽  
A. Hütten ◽  
C. Bansal ◽  
...  
Keyword(s):  
Electric Field ◽  
Gold Films

Relative Intensities in ED Patterns From Thin Gold Films

1972 ◽  
Vol 30 ◽  
pp. 636-637
Author(s):  
R. H. Morriss ◽  
J. D. C. Peng ◽  
C. D. Melvin
Keyword(s):  
Theoretical Calculations ◽  
Diffraction Theory ◽  
Gold Films ◽  
Reasonable Accuracy ◽  
Experimental Conditions ◽  
Crystal Perfection ◽  
Heavy Atoms ◽  
Fine Focus ◽  
Convergent Beam ◽  
Beam Diffraction

Although dynamical diffraction theory was modified for electrons by Bethe in 1928, relatively few calculations have been carried out because of computational difficulties. Even fewer attempts have been made to correlate experimental data with theoretical calculations. The experimental conditions are indeed stringent - not only is a knowledge of crystal perfection, morphology, and orientation necessary, but other factors such as specimen contamination are important and must be carefully controlled. The experimental method of fine-focus convergent-beam electron diffraction has been successfully applied by Goodman and Lehmpfuhl to single crystals of MgO containing light atoms and more recently by Lynch to single crystalline (111) gold films which contain heavy atoms. In both experiments intensity distributions were calculated using the multislice method of n-beam diffraction theory. In order to obtain reasonable accuracy Lynch found it necessary to include 139 beams in the calculations for gold with all but 43 corresponding to beams out of the [111] zone.

“Preparation of Single Crystalline Gold Films for ED Studies”

1972 ◽  
Vol 30 ◽  
pp. 634-635
Author(s):  
Joseph D. C. Peng
Keyword(s):  
Crystal Morphology ◽  
Diffraction Theory ◽  
Scattering Matrix ◽  
Vacuum Evaporation ◽  
Gold Films ◽  
Matrix Formulation ◽  
Silver Films ◽  
Single Crystalline ◽  
Grating Pattern ◽  
Stacking Disorder

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.

Resolution in photoelectron microscopy

1991 ◽  
Vol 49 ◽  
pp. 458-459
Author(s):  
G. F. Rempfer
Keyword(s):  
Electron Microscopy ◽  
Electric Field ◽  
Ultraviolet Light ◽  
Uniform Field ◽  
Virtual Image ◽  
Lens System ◽  
Photoemission Electron Microscopy ◽  
Planar Electrode ◽  
Electron Lens ◽  
Photoemission Electron

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.

Hole Formation in Gold Films

1972 ◽  
Vol 30 ◽  
pp. 510-511
Author(s):  
R. W. Vook ◽  
R. Cook ◽  
R. Ziemer
Keyword(s):  
Deposition Rate ◽  
Quartz Crystal ◽  
Evaporation Rate ◽  
Gold Films ◽  
Hole Density ◽  
Hole Formation ◽  
Microscope Slide ◽  
Crystal Film ◽  
Glass Microscope Slide ◽  
Glass Microscope

During recent experiments on Au films, a qualitative correlation between hole formation and deposition rate was observed. These early studies were concerned with films 80 to 1000A thick deposited on glass at -185°C and annealed at 170°C. In the present studies this earlier work was made quantitative. Deposition rates varying between 5 and 700 A/min were used. The effects of deposition rate on hole density for two films 300 and 700A thick were investigated.Au was evaporated from an outgassed W filament located 10 cm from a glass microscope slide substrate and a quartz crystal film thickness monitor. A shutter separating the filament from the substrate and monitor made it possible to obtain a constant evaporation rate before initiating deposition. The pressure was reduced to less than 1 x 10-6 torr prior to cooling the substrate with liquid nitrogen. The substrate was cooled in 15 minutes during which the pressure continued to drop to the mid 10-7 torr range, where deposition was begun.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Sign in / Sign up

Export Citation Format

Share Document