Tailoring effect of large polaron hopping in the conduction mechanism of Ca-modified BaTiO3 system

2020 ◽  
Vol 31 (12) ◽  
pp. 9212-9223 ◽  
Author(s):  
Supriya Bisen ◽  
Mehjabeen Khan ◽  
Ashutosh Mishra
RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21767-21780
Author(s):  
Mohamed Ben Bechir ◽  
Mohamed Houcine Dhaou

The conduction mechanism in CsSnCl3 is interpreted through the following two approaches: the non-overlapping small polaron tunneling (NSPT) model (monoclinic phase) and the overlapping large polaron tunneling (OLPT) model (cubic phase).


2011 ◽  
Vol 135 (5) ◽  
pp. 054501 ◽  
Author(s):  
Wasi Khan ◽  
Alim H. Naqvi ◽  
Maneesha Gupta ◽  
Shahid Husain ◽  
Ravi Kumar

1996 ◽  
Vol 432 ◽  
Author(s):  
Eric.D. Morrison

AbstractVanadium oxide deposited in thin layers from aqueous colloidal dispersions exhibits electronic conductivity by a small polaron hopping conduction mechanism. Conductivity and static dissipative properties of coatings are unaffected by changes in humidity. Because vanadium oxide is highly colored, the deposition of effective antistatic coatings which are transparent and colorless requires that the percolative (networking forming) properties of the colloidal particles be maximized. The percolative properties of the colloid are strongly influenced by morphology of the dispersed particles and the extent to which they are well dispersed in the aquasol. These properties are determined by the synthetic route to the colloid. Vanadium oxide is the most potent antistatic agent known and has been found to provide antistatic properties even when as little as 1 milligram per square meter is used.


2017 ◽  
Vol 89 (4) ◽  
pp. 419-428 ◽  
Author(s):  
Tetsuaki Nishida ◽  
Yukimi Izutsu ◽  
Mina Fujimura ◽  
Keito Osouda ◽  
Yuki Otsuka ◽  
...  

Abstract20BaO·5ZnO·5Fe2O3·70V2O5 glass annealed at 450°C for 30 min showed a marked decrease in the electric resistivity (ρ) from 4.0×105 to 4.8 Ωcm, while 20BaO·5Cu2O·5Fe2O3·70V2O5 glass from 2.0×105 to 5.0 Ωcm. As for the conduction mechanism, it proved that n-type semiconductor model in conjugation with the small polaron hopping theory was most probable. Since ZnII and CuI have a 3d10-electron configuration in the outer-most orbital, Ga2O3- and GeO2-containing vanadate glasses were explored in this study. 20BaO·5Ga2O3·5Fe2O3·70V2O5 glass showed a less remarkable decrease of ρ from 4.5×105 to 100 Ωcm, and 20BaO·5GeO2·5Fe2O3·70V2O5 glass from 3.3×106 to 400 Ωcm. Activation energies for the conduction (Ea) of GeO2- and Ga2O3-contaning glasses before the annealing were respectively estimated to be 0.42 and 0.41 eV. It proved that barium iron vanadate glass with a smaller Ea value could attain the higher conductivity after the annealing at temperaures higher than the crystalization temperature.


1997 ◽  
Vol 85 (1-3) ◽  
pp. 1069-1072
Author(s):  
M.N. Bussac ◽  
J. Dorignac ◽  
L. Zuppiroli

Author(s):  
M. Wasi Khan ◽  
Shahid Husain ◽  
M.A. Majeed Khan ◽  
Maneesha Gupta ◽  
Ravi Kumar ◽  
...  

2005 ◽  
Vol 19 (23) ◽  
pp. 3619-3629 ◽  
Author(s):  
V. RAJA KUMARI ◽  
G. VENKATAIAH ◽  
P. VENUGOPAL REDDY

A lanthanum-based mixed rare earth manganite system with general composition formula La 0.33 Ln 0.34 Sr 0.33 MnO 3, (where Ln is a rare earth ion) has been prepared by the solid state reaction method. After usual characterization of these materials, a systematic study of the electrical resistivity both as a function of temperature (80–300 K) and magnetic field up to 7 Tesla was undertaken mainly to understand the conduction mechanism. On analyzing the experimental results, it has been concluded that the metallic (ferromagnetic) part of the resistivity (ρ) (below TP) fits with the equation ρ(T)=ρ0+ρ2T2+ρ4.5T4.5, indicating the importance of grain/domain boundary effects (ρ0), the electron-electron scattering process (ρ2T2) and the two magnon scattering process (ρ4.5T4.5). On the other hand, the paramagnetic insulating regime may be explained by using adiabatic small polaron hopping and variable range hopping mechanisms, thereby indicating that polaron hopping might be responsible for the conduction mechanism.


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