Synthesis, characterization, ferroelectric, and piezoelectric properties of (1 − x)BaTiO3−x(BaNi0.5Nb0.5O3) perovskite ceramics

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.

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Transferred PMN-PT Thick Film on Conductive Silver Epoxy

Materials ◽

10.3390/ma11091621 ◽

2018 ◽

Vol 11 (9) ◽

pp. 1621 ◽

Cited By ~ 1

Author(s):

Tao Zhang ◽

Jun Ou-Yang ◽

Xiaofei Yang ◽

Benpeng Zhu

Keyword(s):

Thick Film ◽

Silicon Substrate ◽

Chemical Method ◽

Piezoelectric Properties ◽

Sol Gel ◽

Wet Chemical Method ◽

Chemical Route ◽

Wet Chemical ◽

Silver Epoxy ◽

Ferroelectric And Piezoelectric Properties

Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.

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Structural, ferroelectric and piezoelectric properties of lithium doped sodium potassium niobate

10.1063/5.0019633 ◽

2020 ◽

Author(s):

A. Rashid ◽

N. V. Giridharan

Keyword(s):

Piezoelectric Properties ◽

Potassium Niobate ◽

Sodium Potassium ◽

Sodium Potassium Niobate ◽

Ferroelectric And Piezoelectric Properties

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Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

Journal of Materials Research ◽

10.1557/jmr.2005.0087 ◽

2005 ◽

Vol 20 (3) ◽

pp. 726-733 ◽

Cited By ~ 3

Author(s):

Jong-Jin Choi ◽

Gun-Tae Park ◽

Chee-Sung Park ◽

Hyoun-Ee Kim

Keyword(s):

Thin Film ◽

Buffer Layer ◽

Lead Zirconate Titanate ◽

Piezoelectric Properties ◽

Nickel Nitrate ◽

Si Substrate ◽

Pzt Thin Film ◽

Pzt Films ◽

Lanthanum Nickel ◽

Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

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