Ultraviolet Pulsed Laser-Induced Fluorescence Nonlinearity in Optically Thick Organic Samples

2018 ◽  
Vol 28 (2) ◽  
pp. 689-693 ◽  
Author(s):  
N. A. Maslov
Keyword(s):  
Pulsed Laser ◽  
Laser Induced Fluorescence

scholarly journals Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

APL Materials ◽  
2016 ◽  
Vol 4 (12) ◽  
pp. 126102 ◽  
Author(s):  
Kasper Orsel ◽  
Rik Groenen ◽  
Bert Bastiaens ◽  
Gertjan Koster ◽  
Guus Rijnders ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Fluorescence Analysis ◽  
Laser Induced Fluorescence ◽  
Laser Deposition

Ultraviolet Laser Ablation of a Silicon Wafer

1988 ◽  
Vol 129 ◽  
Author(s):  
Masahiro Kawasaki ◽  
Hiroyasu Sato ◽  
Gen Inoue
Keyword(s):  
Theoretical Model ◽  
Laser Ablation ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Fluorescence Analysis ◽  
Laser Induced Fluorescence ◽  
Wafer Surface ◽  
Translational Energy ◽  
Si Wafer ◽  
Pulsed Laser Irradiation

Pulsed laser irradiation at 248 nm can ablate Si atoms from an Si wafer. The mechanism of this photoablation has been examined by laser-induced fluorescence analysis of the Si products. The Si atoms are measured to leave the wafer surface with averaged translational energy of 2.5 kcal/mol. The distribution of translational energy is well described by the theoretical model for non-cascade ablation processes.

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