Broadband Reflection Minimization Using Silver Ultra Thin Film Sandwiched Between Silicon Nitride Layers for c-Si Solar Cell Application

AbstractA tandem approach is proposed using Silicon nanostructures to increase the efficiency of so-called third generation photovoltaic solar cells.Si quantum dot nanostructures (or silicon nanocrystals)are synthesized by depositing silicon-rich nitride (SRN) layers using plasma-enhanced chemical vapour deposition (PECVD). We have shown the intrinsic formation of silicon nanocrystals (nc-Si) in non-stoechiometric amorphous hydrogenated silicon nitride (a-SiNx:H) layers using pure silane (SiH4) and ammonia (NH3) as reactants. The NH3 would provide more hydrogen in the silicon nitride film leading to an improvement of the crystallinity of Si quantum dots (QD) by favouring the disorder-to-order transition. Furthermore, hydrogen dissociated from the NH3 would passivate the surface of a Si QD more effectively.Transmission Electron Microscopy (TEM) was employed to explore the microstructure of the as-deposited Si-in-SiNx composite films. The chemical bonds of these films were examined by using Fourier Transform Infrared (FTIR) spectroscopy in the wavenumber range from 400 to 4000 cm-1 with a resolution of 4 cm-1. The photoluminescence (PL) property of silicon nanocrystals in silicon-rich nitride (SRN) layers are also investigated. The peak position of PL could be controlled by adjusting the flow rates of ammonia and silane . Two types of luminescent mechanisms, such as radiative defects in the film and the quantum confinement effect (QCE) in silicon nanocrystals, have been proposed to explain the origin of light emission from these structures. These two mechanisms are inherently coexisting in our samples and the photoluminescence spectrum depends on the contribution of each other. The optical absorption properties of the deposited films are obtained and analyzed from light transmittance measurements. Spectroscopique ellipsometry have been performed in order to analyse the refractive index and the extension coefficient. All these measurements were carried out at room temperature. These techniques have given good correlation in the extraction of the absorption coefficient induced by the Si nanocrystal in the visible /UV energy range. Measurements of photocurrent have shown a great increase of the induced currrent in the visible/UV energy range for an optimum of deposition conditions. These results will be discussed in order to reach a better knowledge of the physical properties of this third generation photovoltaic all silicon included material for the tandem solar cell application approach.

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Thin film poly-Si solar cell, with "star structure" on glass substrate fabricated at low temperature

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 ◽

10.1109/pvsc.1997.654155 ◽

2002 ◽

Cited By ~ 8

Author(s):

K. Yamamoto ◽

M. Yoshimi ◽

T. Suzuki ◽

Y. Okamoto ◽

Y. Tawada ◽

...

Keyword(s):

Thin Film ◽

Solar Cell ◽

Low Temperature ◽

Glass Substrate ◽

Si Solar Cell ◽

Star Structure

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Graphene nanoparticle incorporated CuO thin film for solar cell application

Journal of Renewable and Sustainable Energy ◽

10.1063/1.4961590 ◽

2016 ◽

Vol 8 (4) ◽

pp. 043507 ◽

Cited By ~ 11

Author(s):

Saeid Masudy-Panah ◽

Mitali Kakran ◽

Yee-Fun Lim ◽

Chin Sheng Chua ◽

Hui Ru Tan ◽

...

Keyword(s):

Thin Film ◽

Solar Cell ◽

Solar Cell Application

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Numerical modeling and analysis of ultra thin film Cu(In, Ga)Se2 solar cell using SCAPS-1D

2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT) ◽

10.1109/ceeict.2016.7873169 ◽

2016 ◽

Cited By ~ 1

Author(s):

Mohammad Sijanur Rahaman Robin ◽

Mohamed Mansoor Mohamed Rasmi ◽

Md. Shakowat Zaman Sarker ◽

A. S. M. Rabbi Al Mamun

Keyword(s):

Thin Film ◽

Numerical Modeling ◽

Solar Cell ◽

Modeling And Analysis ◽

Ultra Thin Film

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Enhanced optical absorption by Ag nanoparticles in a thin film Si solar cell

Chinese Physics B ◽

10.1088/1674-1056/22/4/045202 ◽

2013 ◽

Vol 22 (4) ◽

pp. 045202 ◽

Cited By ~ 4

Author(s):

Feng-Xiang Chen ◽

Li-Sheng Wang ◽

Wen-Ying Xu

Keyword(s):

Thin Film ◽

Solar Cell ◽

Optical Absorption ◽

Ag Nanoparticles ◽

Si Solar Cell

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Current State: The Development of Thin Film Solar Cells Based on Kesteritee Compound

Journal Of Natural Sciences And Mathematics Research ◽

10.21580/jnsmr.2016.1.1.1641 ◽

2017 ◽

Vol 2 (1) ◽

pp. 99

Author(s):

Fianti Fianti ◽

Badrul Munir ◽

Kyoo Ho Kim ◽

Mohammad Ikhlasul Amal

Keyword(s):

Thin Film ◽

Solar Cell ◽

Thin Film Solar Cell ◽

Photovoltaic Devices ◽

Rare Element ◽

Solar Cell Application ◽

Current State ◽

Production Growth ◽

Fast Development ◽

Chalcopyrite Compound

<div style="text-align: justify;">Thin film solar cell experience fast development, especially for thin film solar cell CdTe and Cu(In,Ga)Se2 (CIGS). However, the usage of rare element in the nature such as In, Te, and Ga and toxic such as Cd give limitation in the future development and production growth in big scale. Development of other alternative compound with maintain the profit of electronic and optic character which get from CIGS chalcopyrite compound will be explain. Compound of Cu2ZnSnSe4 (CZTSe) is downward compound from CIGS with substitute the In and Ga element with Zn and Sn. The compound kesterite structure can be modified with variation of chalcogen element to get wanted character in solar cell application. Efficiency record of photovoltaic devices conversion used this compound or downward reach 9.7%.©2016 JNSMR UIN Walisongo. All rights reserved.</div>

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