Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors

2007 ◽  
Vol 36 (8) ◽  
pp. 1045-1051 ◽  
Author(s):  
E. P. G. Smith ◽  
G. M. Venzor ◽  
Y. Petraitis ◽  
M. V. Liguori ◽  
A. R. Levy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Unit Cell ◽  
Small Unit ◽  
Fabrication And Characterization ◽  
Small Unit Cell

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

1992 ◽  
Vol 60 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
Annette S. Glaeser ◽  
James L. Merz ◽  
Robert E. Nahory ◽  
Maria C. Tamargo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Fabrication And Characterization

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

scholarly journals The Study on Fabrication and Characterization of Al0.2In0.8Sb/InAs0.4Sb0.6 Heterostructures by Molecular Beam Epitaxy

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 102710-102716
Author(s):  
Jing Zhang ◽  
Hongliang Lv ◽  
Yifeng Song ◽  
Haiqiao Ni ◽  
Zhichuan Niu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Fabrication And Characterization

Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates

2020 ◽  
Vol 534 ◽  
pp. 125512
Author(s):  
Ł. Kubiszyn ◽  
D. Benyahia ◽  
K. Michalczewski ◽  
K. Hackiewicz ◽  
A. Kębłowski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gaas Substrates

X-ray Characterization of PbTe/SnTe Superlattices

1997 ◽  
Vol 484 ◽  
Author(s):  
S. O. Ferreira ◽  
E. Abramof ◽  
P. H. O. Rappl ◽  
A. Y. Ueta ◽  
H. Closs ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Base Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dynamical Simulation ◽  
Sample Characterization

AbstractPbTe/SnTe superlattices have been proposed many years ago for use as base material for infrared detectors. However, many difficulties have prevented its use, mainly the ones related to obtaining low concentration SnTe. Recently we have shown that SnTe layers with relatively low hole concentration can be grown by molecular beam epitaxy at low temperature using stoichiometric charges. In this work we investigate the structural properties of PbTe/SnTe superlattices grown by molecular beam epitaxy on (111) BaF2 substrates. Sample characterization has been done by high resolution x-ray diffraction. Information on strain was obtained from reciprocal space maps of asymmetric Bragg reflections and used as input parameters for dynamical simulation of the diffraction spectra.

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