Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

2013 ◽  
Vol 43 (4) ◽  
pp. 828-832 ◽  
Author(s):  
Zeng Zhang ◽  
Christine M. Jackson ◽  
Aaron R. Arehart ◽  
Brian McSkimming ◽  
James S. Speck ◽  
...  
Keyword(s):  
Energy Band ◽  
Direct Determination ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission ◽  
Band Alignments ◽  
Mos Structures

Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy

2021 ◽  
Vol 13 (12) ◽  
pp. 14634-14643
Author(s):  
Melanie A. Jenkins ◽  
Konner E. K. Holden ◽  
Sean W. Smith ◽  
Michael T. Brumbach ◽  
M. David Henry ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Zirconium Oxide ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Internal Photoemission ◽  
Band Alignments

Direct Determination of Indium Antimonide Energy Band Parameters from Diamagnetic Exciton Spectra

1983 ◽  
Vol 118 (1) ◽  
pp. 447-452 ◽  
Author(s):  
L. M. Kanskaya ◽  
S. I. Kokhanovskii ◽  
K. P. Seysyan ◽  
Al. L. Efros
Keyword(s):  
Indium Antimonide ◽  
Energy Band ◽  
Direct Determination

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

2012 ◽  
Vol 101 (2) ◽  
pp. 022105 ◽  
Author(s):  
Rusen Yan ◽  
Qin Zhang ◽  
Wei Li ◽  
Irene Calizo ◽  
Tian Shen ◽  
...  
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission

scholarly journals Energy Band Alignment of Few-Monolayer WS2 and WSe2 with SiO2 Using Internal Photoemission Spectroscopy

2020 ◽  
Vol 9 (9) ◽  
pp. 093009
Author(s):  
Gilles Delie ◽  
Peter M. Litwin ◽  
Stephen J. McDonnell ◽  
Daniele Chiappe ◽  
Michel Houssa ◽  
...  
Keyword(s):  
Energy Band ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Internal Photoemission

Thermal Stability of Ru Gate Electrode on HfSiO Dielectric

2006 ◽  
Vol 917 ◽  
Author(s):  
Karol Frohlich ◽  
Juan Pedro Espinos ◽  
Andrej Vincze ◽  
Milan Tapajna ◽  
Kristina Husekova
Keyword(s):  
Energy Band ◽  
Dielectric Film ◽  
Photoemission Spectroscopy ◽  
Flat Band ◽  
Gate Electrode ◽  
High K ◽  
High K Dielectric ◽  
Mos Structures ◽  
Electron Energy Loss ◽  
Secondary Ion

AbstractWe have investigated advanced MOS structures containing Ru gate electrode, HfxSi1-xOy dielectric film and Si substrate. The Ru gate electrode was grown by MOCVD at 300 °C. The MOS structures were annealed for 30 min in forming gas and nitrogen at temperatures up to 550 °C. Capacitance-voltage measurements showed important shift of the flat band voltage of the Ru/ HfxSi1-xOy/Si gate stack after treatment at 550 °C. X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), reflection electron energy loss spectroscopy (REELS) and secondary ion mass spectroscopy (SIMS) were used to analyze interface between ruthenium and high-k dielectric film. Based on the analysis we were able to build up energy-band alignement for the Ru/ HfxSi1-xOy interface. We observed that the energy-band structure of the Ru/HfxSi1-xOy interface remains stable upon annealing in forming gas up to 550 °C. Presence of hydrogen revealed by SIMS can account for compensation of negative charges in HfxSi1-xOy during thermal treatment.

The Direct Determination of I131 in Heterogeneous Fecal Specimens

1961 ◽  
Vol 41 (4) ◽  
pp. 380-384 ◽  
Author(s):  
Arthur F. Dratz ◽  
James C. Coberly
Keyword(s):  
Direct Determination
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