High Radiative Recombination Rate of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with AlInGaN/AlInN/AlInGaN Tunnel Electron Blocking Layer

2021 ◽  
Author(s):  
Tariq Jamil ◽  
Muhammad Usman ◽  
Habibullah Jamal ◽  
Sibghatullah Khan ◽  
Saad Rasheed ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Radiative Recombination Rate ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

2018 ◽  
Vol 51 (7) ◽  
pp. 075106 ◽  
Author(s):  
Jih-Yuan Chang ◽  
Man-Fang Huang ◽  
Fang-Ming Chen ◽  
Bo-Ting Liou ◽  
Ya-Hsuan Shih ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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