Computer simulation of Ostwald ripening with elastic field interactions

1989 ◽  
Vol 37 (5) ◽  
pp. 1399-1406 ◽  
Author(s):  
Y Enomoto ◽  
K Kawasaki
1993 ◽  
Vol 316 ◽  
Author(s):  
S. Reiss ◽  
K.-H. Heinig ◽  
R. Weber ◽  
W. Skorupa

ABSTRACTResults of a computer simulation of Ostwald ripening during ion beam synthesis of a SIMOX layer are presented. Based on investigations of the as-implanted state the simulation starts with equal-sized SiO2 precipitates, homogeneously distributed in a layer. The simulation shows clearly that Ostwald ripening forms structures in such a system by means of self-organisation.This structure forming process explains in a simple and consistent manner structures of in the concentration profile like ”humps”, ”spikes” and ”banding”, which have been observed experimentally.


2008 ◽  
Vol 277 ◽  
pp. 187-192
Author(s):  
G.V. Lutsenko ◽  
Andriy Gusak

The Ostwald ripening of a two-phase binary alloy has been considered for case of “large” volume fraction of precipitating phase. The approach is proposed in which the composition fluctuations into the vicinity of particles are considered. In this approach the evolution of particle size distributions is analyzed using the computer simulation.


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