Computer simulation of Ostwald ripening for ion beam synthesis of buried layers

2001 ◽  
Vol 178 (1-4) ◽  
pp. 135-137 ◽  
Author(s):  
T Pohl ◽  
C Hammerl ◽  
B Rauschenbach ◽  
U Rüde
Keyword(s):  
Computer Simulation ◽  
Ostwald Ripening ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Buried Layers

Is Self-Organisation During Ostwald Ripening a Crucial Process in Ion Beam Synthesis ?

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Reiss ◽  
K.-H. Heinig ◽  
R. Weber ◽  
W. Skorupa
Keyword(s):  
Computer Simulation ◽  
Concentration Profile ◽  
Ostwald Ripening ◽  
Ion Beam ◽  
Forming Process ◽  
Ion Beam Synthesis ◽  
Consistent Manner ◽  
Self Organisation

ABSTRACTResults of a computer simulation of Ostwald ripening during ion beam synthesis of a SIMOX layer are presented. Based on investigations of the as-implanted state the simulation starts with equal-sized SiO2 precipitates, homogeneously distributed in a layer. The simulation shows clearly that Ostwald ripening forms structures in such a system by means of self-organisation.This structure forming process explains in a simple and consistent manner structures of in the concentration profile like ”humps”, ”spikes” and ”banding”, which have been observed experimentally.

Ion Beam Synthesis of Buried CoxNi1−xSi2 Layers in Silicon

1993 ◽  
Vol 320 ◽  
Author(s):  
M.F. Wu ◽  
J. De Wachter ◽  
A.-M. Van Bavel ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Ion Beam ◽  
Type A ◽  
Type B ◽  
X Ray Diffraction ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Unique Distribution ◽  
Buried Layers

ABSTRACTHeteroepitaxial CoxNi1−xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Buried layers of silicon oxy-nitride fabricated using ion beam synthesis

1988 ◽  
Vol 32 (1-4) ◽  
pp. 427-432 ◽  
Author(s):  
K.J. Reeson ◽  
P.L.F. Hemment ◽  
C.D. Meekison ◽  
C.D. Marsh ◽  
G.R. Booker ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Buried Layers

Ion beam synthesis of thin buried layers of SiO2 in silicon

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 877-881 ◽  
Author(s):  
PLF Hemment ◽  
KJ Reeson ◽  
JA Kilner ◽  
RJ Chater ◽  
C Marsh ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Buried Layers

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Fabrication of buried layers of β-SiC using ion beam synthesis

2020 ◽  
pp. 427-432
Author(s):  
K J Reeson ◽  
P L F Hemment ◽  
J Stoemenos ◽  
J R Davis ◽  
G K Celler
Keyword(s):  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Buried Layers

Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

1998 ◽  
Vol 32 (12) ◽  
pp. 1261-1265
Author(s):  
V. V. Artamanov ◽  
M. Ya. Valakh ◽  
N. I. Klyui ◽  
V. P. Mel’nik ◽  
A. B. Romanyuk ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Buried Layers
Sign in / Sign up

Export Citation Format

Share Document