Growth of single crystals of U1−xThxO2 solid solutions by chemical transport reactions

ABSTRACTSingle crystals of Al2O3 were implanted with chromium and zirconium to fluences of 1 × 1016 to 1 × 1017 ions cm−2. Rutherford backscattering-channeling studies showed the surface layers to be damaged but crystalline with the implanted ions randomly distributed. The microhardness and indentation fracture toughness were higher for the random solutions than for conventionally formed solid solutions. Changes in structure and properties caused by annealing in air at temperatures up to 1800°C were studied.

Download Full-text

Growth and study of single crystals of Pb1 − x BaxSc0.5Nb0.5O3 solid solutions

Crystallography Reports ◽

10.1134/1.1343141 ◽

2001 ◽

Vol 46 (1) ◽

pp. 133-137 ◽

Cited By ~ 1

Author(s):

I. P. Raevskii ◽

V. V. Eremkin ◽

V. G. Smotrakov ◽

E. S. Gagarina ◽

M. A. Malitskaya

Keyword(s):

Single Crystals ◽

Solid Solutions

Download Full-text

Formation of manganese solid solutions in single crystals of ZnGeP2

Russian Journal of Applied Chemistry ◽

10.1134/s1070427210010301 ◽

2010 ◽

Vol 83 (1) ◽

pp. 157-160

Author(s):

S. E. Nikitin ◽

S. I. Goloshchapov ◽

D. I. Elets ◽

N. N. Konstantinova

Keyword(s):

Single Crystals ◽

Solid Solutions

Download Full-text

Scintillation properties of single crystals of K(Sr1-xEux)2Cl5solid solutions

Functional materials ◽

10.15407/fm28.04.633 ◽

2021 ◽

Vol 28 (2) ◽

Keyword(s):

Single Crystals ◽

Solid Solutions

Download Full-text

Tensoresistive properties of single crystals TlIn1−xGaxSe2

International Journal of Modern Physics B ◽

10.1142/s0217979221502015 ◽

2021 ◽

pp. 2150201

Author(s):

Eldar Mehraly Gojayev ◽

Gulshan Nuraddin Mammadova

Keyword(s):

Single Crystals ◽

Solid Solutions ◽

High Strain ◽

Sensitivity Coefficient ◽

Mechanical Deformation ◽

Static Method ◽

Strain Gauges ◽

Strain Sensitivity ◽

Zone Recrystallization

In this work, single crystals of TlIn[Formula: see text]Ga[Formula: see text]Se2 solid solutions were grown by the methods of zone recrystallization, technologies for the manufacture of strain gauges based on them were developed and the tensoresistive properties of these phases were studied, the coefficient of strain sensitivity was determined by the static method depending on the temperature, the magnitude of mechanical deformation and optical illumination. Revealing that the single crystals have a high strain sensitivity coefficient, by the variation of the composition, quantity of mechanical deformation and the optical illumination, it is possible to control the phase coefficients investigated tensosensitivity.

Download Full-text

Gas-phase synthesis of single crystals of Ge–Si system

International Journal of Modern Physics B ◽

10.1142/s0217979220501787 ◽

2020 ◽

Vol 34 (19) ◽

pp. 2050178

Author(s):

Aynur I. Hashimova

Keyword(s):

Temperature Gradient ◽

Single Crystals ◽

Gas Phase ◽

Vapor Phase ◽

Solid Solutions ◽

Closed Volume ◽

Phase Synthesis ◽

Polycrystalline Layer ◽

Cold Zone ◽

Hot Zone

In this study, the synthesis of single crystals of solid solutions Ge[Formula: see text]Si[Formula: see text] from the gas phase was performed in two different variants. Here, the vapor phase is created in a closed volume. A special ampoule has been made for this purpose. Ge–Si is placed near one end of the ampoule. A temperature gradient is created along the ampoule. The temperature of the hot zone was chosen to be [Formula: see text]C and the temperature of the cold zone to be [Formula: see text]C. It has been found that single crystals can form not only on the polycrystalline layer, but also from separate centers on the walls of the ampoule.

Download Full-text