In1−xGaxP Bulk crystal growth and In1−xGaxPepitaxial growth on In1−xGaxP substrate by the temperature difference method under controlled vapor pressure

1986 ◽  
Vol 76 (1) ◽  
pp. 1-5 ◽  
Author(s):  
J. Nishizawa ◽  
S. Yoshida
Keyword(s):  
Crystal Growth ◽  
Vapor Pressure ◽  
Temperature Difference ◽  
Difference Method ◽  
Bulk Crystal ◽  
Bulk Crystal Growth

Three-Dimensional Computations of Transport and Growth for Crystal Growth Systems

2000 ◽  
Author(s):  
Jeffrey J. Derby ◽  
Andrew Yeckel
Keyword(s):  
Finite Element ◽  
Crystal Growth ◽  
Finite Element Methods ◽  
Three Dimensional ◽  
Bulk Crystal ◽  
Time Dependent ◽  
Engineering Systems ◽  
Bulk Crystal Growth ◽  
Strongly Nonlinear ◽  
Parallel Supercomputers

Abstract Modern finite element methods implemented on parallel supercomputers promise to allow the study of three-dimensional, time-dependent continuum phenomena in many engineering systems. This paper shows several examples of the fruitful application of these approaches to bulk crystal growth systems, where strongly nonlinear coupled phenomena are important.

Erratum to “Modeling of facet formation in SiC bulk crystal growth” [CRYS 266 (2004) 313]

2004 ◽  
Vol 268 (1-2) ◽  
pp. 328 ◽  
Author(s):  
I.D Matukov ◽  
D.S Kalinin ◽  
M.V Bogdanov ◽  
S.Yu Karpov ◽  
D.Kh Ofengeim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Facet Formation

Modeling and bulk crystal growth processes: What is to be learned?

2010 ◽  
Author(s):  
Jeffrey J. Derby ◽  
W. Wang ◽  
Katsuo Tsukamoto ◽  
Di Wu
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Growth Processes ◽  
Bulk Crystal Growth
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