A new type of switching and memory effect in semiconductor-dielectric thin film junction

1972 ◽  
Vol 8-10 ◽  
pp. 868-876 ◽  
Author(s):  
Y Hamakawa ◽  
M Yoshida ◽  
K Yamanaka
2003 ◽  
Vol 112 ◽  
pp. 1177-1180 ◽  
Author(s):  
A. Schuster ◽  
H. F. Voggenreiter ◽  
D. C. Dunand ◽  
G. Eggeler

2002 ◽  
Vol 41 (16) ◽  
pp. 3127 ◽  
Author(s):  
Pascal Huguet-Chantôme ◽  
Ludovic Escoubas ◽  
François Flory

2010 ◽  
Vol 113-116 ◽  
pp. 2333-2336 ◽  
Author(s):  
Chun Wei Li ◽  
Xue Song Jiang ◽  
Qun Li Zhang ◽  
Shu Yan Xu ◽  
Gui Ying Wang

Food Packaging material requires an excellent barrier ability to humidity and oxygen.SiOx barrier thin film deposited on high polymer substrate can compare beauty with aluminum foil in the barrier quality,even more SiOx barrier thin film is obviously allowing microwave permeating directly and it also provide a chance for merchant to vision their production in shelf life.SiOx film as barrier packaging material is becoming a high light.The current status and research progress of new type high barrier thin film packaging material were overviewed and production technology was introduced. The various influencing factors were discussed, including background vacuum, reactive gases, and pretreatment of the substrate surface and properties.


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