Influence of effective charges on X5U and L3V in crystals with a sphalerite structure

1977 ◽  
Vol 38 (3) ◽  
pp. 331-332
Author(s):  
Djordje Burgarinović
Author(s):  
N.-H. Cho ◽  
S. McKernan ◽  
C.B. Carter ◽  
K. Wagner

Interest has recently increased in the possibility of growing III-V compounds epitactically on non-polar substrates to produce device quality material. Antiphase boundaries (APBs) may then develop in the GaAs epilayer because it has sphalerite structure (face-centered cubic with a two-atom basis). This planar defect may then influence the electrical behavior of the GaAs epilayer. The orientation of APBs and their propagation into GaAs epilayers have been investigated experimentally using both flat-on and cross-section transmission electron microscope techniques. APBs parallel to (110) plane have been viewed at the atomic resolution and compared to simulated images.Antiphase boundaries were observed in GaAs epilayers grown on (001) Ge substrates. In the image shown in Fig.1, which was obtained from a flat-on sample, the (110) APB planes can be seen end-on; the faceted APB is visible because of the stacking fault-like fringes arising from a lattice translation at this interface.


1992 ◽  
Vol 291 ◽  
Author(s):  
R. Resta ◽  
M. Posternak ◽  
A. Baldereschi

ABSTRACTWe outline a modern theory of the spontaneous polarization P in pyroelectric and ferroelectric materials. Although P itself isnot an observable, the difference ΔP between two crystal states can indeed be measured and calculated. We define P as the difference between the polar structure and a suitably chosen nonpolar prototype structure. We previously proposed and implemented a supercell scheme in order to evaluate P in pyroelectric BeO; here we adopt an approach recently developed by King-Smith and Vanderbilt, where ΔP is obtained from the computation of Berry's phases, with no use of supercells. We apply this novel approach, which is numerically very convenient, in order to revisit our previous work on BeO. We then perform a first-principles investigation of the spontaneous polarization P of KNbO3 in its tetragonal phase, which is a well studied perovskite ferroelectric. Our calculated P value confirms the most recent experimental data. The polarization is linear in the ferroelectric distortion; the Born effective charges show strong variations from nominal ionic values, and a large inequivalence of the 0 ions. Only the highest nine valence-band states (O 2p) contribute to P, while all the other states behave as rigid core states.


2006 ◽  
Vol 73 (21) ◽  
Author(s):  
V. G. Baonza ◽  
M. Taravillo ◽  
M. Cáceres ◽  
J. Núñez
Keyword(s):  

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