Multilayer thin-film substrate for multichip packaging

1989 ◽  
Vol 20 (3) ◽  
pp. 52
Keyword(s):  
Thin Film ◽  
Multilayer Thin Film ◽  
Film Substrate

Stresses in a Multilayer Thin Film/Substrate System Subjected to Nonuniform Temperature

2008 ◽  
Vol 75 (2) ◽  
Author(s):  
X. Feng ◽  
Y. Huang ◽  
A. J. Rosakis
Keyword(s):  
Thin Film ◽  
Field Measurements ◽  
Film Stress ◽  
Effect Of Temperature ◽  
Multilayer Thin Film ◽  
Nonuniform Temperature ◽  
Curvature Invariant ◽  
Full Field ◽  
Curvature Measurements ◽  
Film Substrate

Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to uniform film stress and system curvature states over the entire system of a single thin film on a substrate. By considering a circular multilayer thin film/substrate system subjected to nonuniform temperature distributions, we derive relations between the stresses in each film and temperature, and between the system curvatures and temperature. These relations featured a “local” part that involves a direct dependence of the stress or curvature components on the temperature at the same point, and a “nonlocal” part, which reflects the effect of temperature of other points on the location of scrutiny. We also derive relations between the film stresses in each film and the system curvatures, which allow for the experimental inference of such stresses from full-field curvature measurements in the presence of arbitrary nonuniformities. These relations also feature a “nonlocal” dependence on curvatures making full-field measurements of curvature a necessity for the correct inference of stress. The interfacial shear tractions between the films and between the film and substrate are proportional to the gradient of the first curvature invariant, and can also be inferred experimentally.

Multilayer thin-film substrate for multichip packaging

2003 ◽  
Author(s):  
C.C. Chao ◽  
K.D. Scholz ◽  
J. Leibovitz ◽  
M.L. Cobarruviaz ◽  
C.C. Chang
Keyword(s):  
Thin Film ◽  
Multilayer Thin Film ◽  
Film Substrate

Microtomy of spherical Al2O3 powders

1983 ◽  
Vol 41 ◽  
pp. 74-75
Author(s):  
E.J. Jenkins ◽  
D.S. Tucker ◽  
J.J. Hren
Keyword(s):  
Thin Film ◽  
Size Range ◽  
Particle Aggregation ◽  
Ion Milling ◽  
Thin Sections ◽  
Α Phase ◽  
Convenient Means ◽  
Van Der Waals Attraction ◽  
Negative Feature ◽  
Film Substrate

The size range of mineral and ceramic particles of one to a few microns is awkward to prepare for examination by TEM. Electrons can be transmitted through smaller particles directly and larger particles can be thinned by crushing and dispersion onto a substrate or by embedding in a film followed by ion milling. Attempts at dispersion onto a thin film substrate often result in particle aggregation by van der Waals attraction. In the present work we studied 1-10 μm diameter Al2O3 spheres which were transformed from the amprphous state to the stable α phase.After the appropriate heat treatment, the spherical powders were embedded in as high a density as practicable in a hard EPON, and then microtomed into thin sections. There are several advantages to this method. Obviously, this is a rapid and convenient means to study the microstructure of serial slices. EDS, ELS, and diffraction studies are also considerably more informative. Furthermore, confidence in sampling reliability is considerably enhanced. The major negative feature is some distortion of the microstructure inherent to the microtoming operation; however, this appears to have been surprisingly small. The details of the method and some typical results follow.

Microstructural investigation of surface roughness in MBE-grown AlAs

1995 ◽  
Vol 53 ◽  
pp. 454-455
Author(s):  
R. Rajesh ◽  
R. Droopad ◽  
C. H. Kuo ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Growth Control ◽  
Native Oxide ◽  
Effusion Cell ◽  
Surface Oxide Layer ◽  
Microstructural Investigation ◽  
Mbe Growth ◽  
Film Substrate ◽  
And Control

Knowledge of material pseudodielectric functions at MBE growth temperatures is essential for achieving in-situ, real time growth control. This allows us to accurately monitor and control thicknesses of the layers during growth. Undesired effusion cell temperature fluctuations during growth can thus be compensated for in real-time by spectroscopic ellipsometry. The accuracy in determining pseudodielectric functions is increased if one does not require applying a structure model to correct for the presence of an unknown surface layer such as a native oxide. Performing these measurements in an MBE reactor on as-grown material gives us this advantage. Thus, a simple three phase model (vacuum/thin film/substrate) can be used to obtain thin film data without uncertainties arising from a surface oxide layer of unknown composition and temperature dependence.In this study, we obtain the pseudodielectric functions of MBE-grown AlAs from growth temperature (650°C) to room temperature (30°C). The profile of the wavelength-dependent function from the ellipsometry data indicated a rough surface after growth of 0.5 μm of AlAs at a substrate temperature of 600°C, which is typical for MBE-growth of GaAs.

scholarly journals Selective normal mode excitation in multilayer thin film bulk acoustic wave resonators

2014 ◽  
Vol 105 (16) ◽  
pp. 162910 ◽  
Author(s):  
Andrey Kozyrev ◽  
Anatoly Mikhailov ◽  
Sergey Ptashnik ◽  
Peter K. Petrov ◽  
Neil Alford
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Normal Mode ◽  
Bulk Acoustic Wave ◽  
Multilayer Thin Film ◽  
Mode Excitation ◽  
Film Bulk ◽  
Acoustic Wave Resonators ◽  
Bulk Acoustic Wave Resonators
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