The influence of physical lattice defects on grain growth in high purity metals

1972 ◽  
Vol 6 (3) ◽  
pp. 215-218 ◽  
Author(s):  
S. Bercovici ◽  
M. Fiset ◽  
A. Galibois
1971 ◽  
Vol 26 (7) ◽  
pp. 1198-1201
Author(s):  
C. Weyrich

Abstract Grain Growth of Pure and Doped Poly crystalline Selenium Samples of vitreous high-purity selenium as well as vitreous chlorine-and thallium-doped selenium have been brought into the polycrystalline form by annealing. The dependence of grain size on annealing time tu was measured. In high-purity selenium and in chlorine-doped selenium the mean grain diameter increases essentially ~ tu1/2 , in thallium-doped selenium ~ tu1/2 , as is expected from the laws of grain growth. The proportionality between electrical conductivity and specific grain surface reported by other authors could not be verified.


2003 ◽  
Vol 253 ◽  
pp. 63-72 ◽  
Author(s):  
Suk Joong L. Kang ◽  
Sung Yoon Chung ◽  
Janusz Nowotny

1959 ◽  
Vol 37 (4) ◽  
pp. 496-498 ◽  
Author(s):  
E. L. Holmes ◽  
W. C. Winegard

Comparisons are made between theoretical and experimental rates of boundary migration during grain growth in zone-refined metals; these indicate that a single-atom process is involved. A model is proposed for the mechanism of grain-boundary migration based on the assumption of a single-atom process and the fact that the energies of activation for grain growth, both in zone-refined lead and tin, are similar to the energy barrier to be overcome by an atom in transferring from the solid to the liquid state during melting.


1972 ◽  
Vol 6 (10) ◽  
pp. 929-931 ◽  
Author(s):  
Fumihiko Ichikawa ◽  
Kohji Yamakawa ◽  
F. Eiichi Fujita

2005 ◽  
Vol 46 (12) ◽  
pp. 2975-2980 ◽  
Author(s):  
Naoki Takata ◽  
Fuyuki Yoshida ◽  
Ken-ichi Ikeda ◽  
Hideharu Nakashima ◽  
Hiroshi Abe

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