Symmetry in Raman scattering from the optical phonon in single crystal beryllium

1970 ◽  
Vol 8 (10) ◽  
pp. 803-805 ◽  
Author(s):  
Lewis M. Fraas ◽  
S.P.S. Porto ◽  
Eugene Loh
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Optical Phonon

Brillouin and Raman scattering studies of single-crystal-texture polyethylene

1985 ◽  
Vol 18 (8) ◽  
pp. 1571-1576 ◽  
Author(s):  
Paul J. Phillips ◽  
Y. T. Jang ◽  
Q. L. Liu ◽  
Chin Hsieu Wang ◽  
John F. Rabolt
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Crystal Texture

Resonator Module for a Laser on the Effect of Stimulated Raman Scattering on a Diamond Single Crystal

2021 ◽  
Vol 66 (2) ◽  
pp. 220-225
Author(s):  
M. S. Andreeva ◽  
N. V. Artyushkin ◽  
K. M. Krymsky ◽  
A. I. Laptev ◽  
N. I. Polushin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Stimulated Raman Scattering ◽  
Diamond Single Crystal ◽  
Stimulated Raman

Study of anharmonicity in pure and doped InSe by Raman scattering

2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Temperature Variation ◽  
Optical Phonon ◽  
Line Center ◽  
Anharmonic Effect ◽  
Layered Semiconductor ◽  
Center Shift ◽  
Raman Modes ◽  
Quartic Anharmonicity

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.

Raman Scattering with Multiphonon Process in Single Crystal of α-NiSO4·6H2O

1983 ◽  
Vol 52 (1) ◽  
pp. 295-303 ◽  
Author(s):  
L. S. G. Cacela ◽  
J. G. Ramos ◽  
G. M. Gualberto
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Multiphonon Process

Stimulated Raman Scattering in a Calcite Single Crystal at Picosecond Laser Excitation

2020 ◽  
Vol 28 (4) ◽  
pp. 382-388
Author(s):  
V. O. Gladyshev ◽  
V. S. Gorelik ◽  
E. A. Sharandin ◽  
F. S. Demeshkin
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Laser Excitation ◽  
Stimulated Raman Scattering ◽  
Picosecond Laser ◽  
Stimulated Raman

Temperature dependence of Raman scattering in single crystal SnSe

2020 ◽  
Vol 107 ◽  
pp. 103034 ◽  
Author(s):  
Xiangnan Gong ◽  
Hong Wu ◽  
Dingfeng Yang ◽  
Bin Zhang ◽  
Kunling Peng ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Temperature Dependence

Stimulated Low-Frequency Raman Scattering in a Single-Crystal Diamond with a Buried Graphitized Layer

2019 ◽  
Vol 126 (3) ◽  
pp. 290-293 ◽  
Author(s):  
M. V. Tareeva ◽  
V. A. Dravin ◽  
R. A. Khmelnitskii ◽  
N. V. Chernega ◽  
A. D. Kudryavtseva ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Low Frequency ◽  
Single Crystal Diamond
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