Optically detected electron paramagnetic resonance of the shallow aluminium acceptor in 4H- and 6H- silicon carbide

1996 ◽  
Vol 98 (9) ◽  
pp. 835-838 ◽  
Author(s):  
J. Reinke ◽  
S. Greulich-Weber ◽  
J.-M. Spaeth
2021 ◽  
Author(s):  
◽  
Rebecca Jane Sutton

<p>Organic light emitting diodes (OLEDs) are an emerging technology based on electrically conducting polymer films, with great promise for large area lighting and flexible ultra-thin displays. However, despite the rapid technological development, there is still a poor understanding of the degradation and spindependent recombination processes that take place inside an OLED. In this thesis, Electron Paramagnetic Resonance (EPR) was used to investigate these processes in blue-emitting OLEDs.  A successful procedure was developed and refined for fabricating OLEDs with the structure ITO/PEDOT:PSS/emissive layer/Al/Ag, with and without the PEDOT:PSS hole-transporting layer. The organic emissive layer was either F8BT, PFO, or PVK:OXD-7:FIrpic (PB). These OLEDs were fabricated in air and with a geometry optimised for EPR experiments. Critical features for satisfactory devices were found to be a sufficiently thick organic layer and minimal exposure to the air.  A compact apparatus was developed for simultaneous light output, current, and voltage measurements on the OLEDs while in an inert glove box environment. Electroluminescence and current-voltage parameters measured for these devices showed predominantly trap-controlled space-charge-limited conduction.   OLEDs with PFO as the emissive layer and with a PEDOT:PSS layer were investigated with conventional, electrically-detected (ED) and optically-detected (OD) EPR techniques. EDEPR and ODEPR signals were observed at ~9.2 GHz and in the low (<50 mT) and high (~330 mT) magnetic field regimes and were found to change markedly with time during operation as the device degraded. The low field signals initially showed a composite broad quenching and superimposed narrow enhancing response centred around zero field strength. These signals were attributed to magneto-resistance (MR) and magneto-electroluminescence (MEL). Following operational ageing, a third, narrow quenching line was observed in the MR and the ratio of the initial two MR responses changed substantially. These effects are tentatively attributed to a hyperfine interaction.  For both EDEPR and ODEPR, quenching high field resonances with a g-value (gyromagnetic ratio) of 2.003±0.001 were observed. The current-quenching resonance gradually diminished during operation and after 4–5 hours was replaced by a current-enhancing resonance. The appearance of this latter resonance could be explained by chemical changes in the OLED due to the diffusion of oxygen through the device from the oxygen-plasma-treated ITO. A working model is proposed which can explain this observed change as spindependent trapping and recombination at free radicals, although the model requires further experimentation to test its validity.</p>


1998 ◽  
Vol 537 ◽  
Author(s):  
M.G. Weinstein ◽  
M. Stavola ◽  
C.Y. Song ◽  
C. Bozdog ◽  
H. Przbylinska ◽  
...  

AbstractVibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Si-doped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm-1 in GaN that had been implanted with protons. These frequencies are close to those predicted for VGa-Hn complexes, leading to the tentative assignment of the new lines to VGa defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LEI, both of which were seen previously for electron-irradiated GaN.


2005 ◽  
Vol 483-485 ◽  
pp. 489-492 ◽  
Author(s):  
P.G. Baranov ◽  
Ivan V. Ilyin ◽  
Marina V. Muzafarova ◽  
E.N. Mokhov ◽  
S.G. Konnikov

The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature annealing have been discovered by EPR. After annealing at 1500°C at least five new axially symmetric centers with the electron spin S = 1/2 and S = 1 were shown to arise in 6H-SiC crystals. The striking feature of all discovered centers is a strong hyperfine interaction with a great number (up to twelve) of equivalent host Si (C) atoms. Two models, a four-vacancy complex VSi-3VC, and a split-interstitial antisite (C2)Si or a pair of two antisites (C2)Si-SiC are discussed. There is a good probability that some of new centers could be related to the famous D1 and DII centers. After annealing at 2000°C the dc1-dc4 centers disappeared and a new triplet center labeled as N-V in the form of a silicon vacancy and a nitrogen atom in neighboring carbon substitutional position has been observed. The parameters of this center are similar to that for well-known N-V center in diamond.


2000 ◽  
Vol 15 (1) ◽  
pp. 55-60 ◽  
Author(s):  
M März ◽  
S Greulich-Weber ◽  
J-M Spaeth ◽  
E N Mokhov ◽  
E N Kalabukhova

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