Materials Science Forum - Silicon Carbide and Related Materials 2004
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253
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Published By Trans Tech Publications Ltd.

0878499636
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range

2005 ◽  
pp. 997-1000
Author(s):  
Mykola S. Boltovets ◽  
Volodymyr V. Basanets ◽  
Nicolas Camara ◽  
Valentyn A. Krivutsa ◽  
K. Zekentes
Keyword(s):  
Pin Diodes ◽  
Temperature Range

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

2005 ◽  
pp. 989-992
Author(s):  
S.I. Maximenko ◽  
Stanislav Soloviev ◽  
A.E. Grekov ◽  
A. Bolotnikov ◽  
Ying Gao ◽  
...  
Keyword(s):  
Forward Voltage ◽  
Pin Diodes ◽  
Voltage Drift

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

2005 ◽  
pp. 977-980
Author(s):  
Dethard Peters ◽  
Rudolf Elpelt ◽  
Reinhold Schörner ◽  
Karl-Otto Dohnke ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Large Area ◽  
Pin Diodes

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

2005 ◽  
pp. 97-100 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
Tomonori Nakamura ◽  
Kunikaza Izumi ◽  
...  
Keyword(s):  
Basal Plane

Numerical Analysis of SiC Merged PiN Schottky Diodes

2005 ◽  
pp. 949-952 ◽  
Author(s):  
T. Ayalew ◽  
Sang Cheol Kim ◽  
T. Grasser ◽  
S. Selberherr
Keyword(s):  
Numerical Analysis ◽  
Schottky Diodes

Planar Schottky Microwave Diodes on 4H-SiC

2005 ◽  
pp. 937-940
Author(s):  
Mattias Südow ◽  
Niklas Rorsman ◽  
Per Åke Nilsson ◽  
Herbert Zirath

Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers

2005 ◽  
pp. 929-932
Author(s):  
Xavier Jordà ◽  
Dominique Tournier ◽  
Jose Rebollo ◽  
José Millán ◽  
Phillippe Godignon
Keyword(s):  
High Current ◽  
Schottky Rectifiers ◽  
Temperature Impact

High Power Lateral Epitaxy MESFET Technology in Silicon Carbide

2005 ◽  
pp. 853-856 ◽  
Author(s):  
Andrey O. Konstantinov ◽  
Chris I. Harris ◽  
I.C. Ray
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Lateral Epitaxy
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