Hydrodynamic hot-electron transport simulation based on the Monte Carlo method

1989 ◽  
Vol 32 (12) ◽  
pp. 1347-1351 ◽  
Author(s):  
D.L. Woolard ◽  
J-L. Pelouard ◽  
R.J. Trew ◽  
M.A. Littlejohn ◽  
C.T. Kelley
2009 ◽  
Vol 23 (08) ◽  
pp. 1101-1109 ◽  
Author(s):  
H. ARABSHAHI

The steady-state and transient electron transport in ZnO field effect transistor have been studied using an ensemble Monte Carlo simulation which takes into account the hot-electron transport phenomena. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted I–V and transfer charateristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derived the frequency bandwidth. The value of 80 ± 5 GHz has been derived for the intrinsic current gain cut-off frequency of the ZnO MESFETs.


1987 ◽  
Vol 61 (4) ◽  
pp. 1460-1468 ◽  
Author(s):  
Paolo Bordone ◽  
Carlo Jacoboni ◽  
Paolo Lugli ◽  
Lino Reggiani ◽  
Peter Kocevar

2005 ◽  
Vol 20 (3) ◽  
pp. 279-285 ◽  
Author(s):  
E Starikov ◽  
P Shiktorov ◽  
V Gružinskis ◽  
L Reggiani ◽  
L Varani ◽  
...  

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