Determination of the fitting parameters for using uniform emitter and base doping profile in bipolar transistor modeling

Solid-State Electronics ◽

10.1016/0038-1101(94)90124-4 ◽

1994 ◽

Vol 37 (1) ◽

pp. 183-186 ◽

Author(s):

J.J. Liou ◽

C.S. Ho ◽

A. Kager

Keyword(s):

Bipolar Transistor ◽

Doping Profile ◽

Fitting Parameters ◽

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Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783823 ◽

2011 ◽

Author(s):

S Chowdhury ◽

S Basu

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Analytical Modelling ◽

Doping Profile ◽

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A study of the effects of the base doping profile on SiGe heterojunction bipolar transistor performance for all levels of injection

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/4/012 ◽

2006 ◽

Vol 21 (4) ◽

pp. 486-493 ◽

Author(s):

Gagan Khanduri ◽

Brishbhan Panwar

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Doping Profile ◽

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A new method for the determination of channel depth and doping profile in buried-channel MOS transistors

Solid-State Electronics ◽

10.1016/0038-1101(88)90424-8 ◽

1988 ◽

Vol 31 (8) ◽

pp. 1259-1264 ◽

Author(s):

K. Iniewski ◽

A. Jakubowski

Keyword(s):

Doping Profile ◽

Mos Transistors ◽

Channel Depth ◽

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On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.925251 ◽

2001 ◽

Vol 48 (6) ◽

pp. 1222-1224 ◽

Author(s):

M. Jagadesh Kumar ◽

V.S. Patri

Keyword(s):

Transit Time ◽

Bipolar Transistor ◽

Iterative Schemes ◽

Doping Profiles ◽

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Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering

Analytical Chemistry ◽

10.1021/acs.analchem.9b02687 ◽

2019 ◽

Vol 91 (14) ◽

pp. 9315-9322 ◽

Author(s):

Won Ja Min ◽

Jwasoon Kim ◽

Kyungsu Park ◽

Gabriel Marmitt ◽

Jonathan England ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Time Of Flight ◽

Doping Profile ◽

Medium Energy ◽

Ion Scattering ◽

Arsenic Doping ◽

Medium Energy Ion Scattering

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Determination of the doping profile near the metal-semiconductor interface of ZrN/GaAs contacts

IEEE Transactions on Electron Devices ◽

10.1109/16.2564 ◽

1988 ◽

Vol 35 (8) ◽

pp. 1384-1386 ◽

Author(s):

R.M. Fourkas ◽

N.W. Cheung

Keyword(s):

Doping Profile ◽

Semiconductor Interface

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Accurate determination of doping profile from MOSFET d.c. measurement

Microelectronics Journal ◽

10.1016/s0026-2692(88)80002-8 ◽

1988 ◽

Vol 19 (6) ◽

pp. 4-7

Author(s):

S. Gupta

Keyword(s):

Accurate Determination ◽

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Determination of the influence of doping profile on the performance of mm-wave gunn elements by using an efficient physical simulator

International Journal of Infrared and Millimeter Waves ◽

10.1007/bf02088906 ◽

1996 ◽

Vol 17 (7) ◽

pp. 1205-1218

Author(s):

Bing Wang ◽

Ali Abou-Elnour ◽

Klaus Schünemann

Keyword(s):

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Simple Method for the Determination of the Doping Profile in MIS Structures with Implanted Shallow p-n Junction

phys stat sol (a) ◽

10.1002/pssa.2210910265 ◽

1985 ◽

Vol 91 (2) ◽

pp. K173-K178 ◽

Author(s):

V. S. Lysenko ◽

A. N. Nazarov ◽

T. E. Rudenko

Keyword(s):

Doping Profile ◽

Simple Method ◽

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Determination of doping profile in sub-Debye-length region

10.1109/iedm.1989.74375 ◽

2003 ◽

Author(s):

T. Toyabe ◽

H. Matsuo ◽

S. Yamamoto ◽

H. Masuda

Keyword(s):

Debye Length ◽

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