МДП транзистор на основе пленки PbSnTe : In с подзатворным диэлектриком Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--=SUP=-*-=/SUP=-

Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe:In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate characteristics of the MIST at Т = 4.2 К have been investigated. It is shown that in MIST based on PbSnTe:In films with n ~ 1017 cm-3 the modulation of the channel current reaches 7 – 8 % in the range of gate voltages – 10 V < Ugate < + 10 V. The features of the source-drain CVC and the gate characteristics for a pulsed and sawtooth variation of Ugate are considered.

CHARGE DISTRIBUTION IN THE AlO - SiO SYSTEM EXPOSED TO IONIZING RADIATION

Полупроводниковые МДП (металл - диэлектрик - полупроводник) структуры являются ключевыми элементами современной электронной техники, в том числе устройств работающих в условиях воздействия проникающих излучений. Одним из возможных подходов к уменьшению радиационных эффектов в МДП структурах является использование диэлектриков, которые уменьшают генерацию и накопление избыточного пространственного заряда в объеме диэлектрика. В работе исследована система диэлектриков AlO - SiO. Исследование показывает пригодность использования МДП структур, на основе системы диэлектриков, для формирования приборов с высокой радиационной стойкостью. Нанесение слоя AlO поверх слоя SiO улучшает рабочие характеристики МДП структур за счет повышения однородности параметров. Основной эффект влияния слоя AlO на параметры структур заключается в уменьшении механических напряжений на границе SiO-подложка. Захват ловушками электронов в AlO, компенсирует заряд захваченных дырок в AlO, и снижает паразитный ток через AlO. Metal-insulator-semiconductor (MIS) structures are key elements of modern electronic technology, including devices operating under conditions of exposure to penetrating radiation. One of the possible approaches to reducing radiation effects in MIS structures is the use of dielectrics, which reduce the generation and accumulation of excess space charge in the bulk of the dielectric. We investigated the system of dielectrics AlO - SiO. The study shows the suitability of using MIS structures based on a system of dielectrics for formation of devices with high radiation resistance. Applying a AlO layer on top of the SiO layer improves the performance of MIS structures by increasing the uniformity of parameters. The main effect of the influence of the AlO layer on the parameters of the structures is to reduce the mechanical stresses at the interface SiO -substrate. The trapping of electrons in AlO, compensates for the charge of the trapped holes in SiO, and reduces the parasitic current through AlO.

Electrophysical characteristics of germanium MIS structures with rare-earth element fluorides

The electrical properties of MIS structures with rare-earth element fluorides on germanium substrates were studied to analyze the possibility of using these materials as gate dielectrics of devices. The structures are also studied from the point of view of assessing the degradation of their electrophysical properties under the action of electric fields of ~108 V/m, which act on the dielectric during electroforming, since the MIS structures with rare-earth element fluorides have the property of bistable switching. Studies of the I-V and C-V characteristics show that all structures have approximately the same value of the density of surface states at the rare-earth element / Ge fluoride interface. The leakage currents in the MIS structures with TmF3 and SmF3 film are less than in the MIS structures with NdF3 film of greater thickness. There is also no effect of reducing the current density when using the double film structure CeF3/DyF3. The most promising material with a low leakage current at a fairly high value of the dielectric constant in germanium MIS structures is thin-film samarium fluoride.

Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer and TiO2 protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO2 layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO2. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO2 layer thickness is discussed in the paper. Results revealed that utilization of TiO2 layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.