Etch rate behaviour of phosphosilicate glass films chemically vapour deposited in the SiH4PH3O2N2 system at low temperature

Thin Solid Films ◽

10.1016/0040-6090(91)90378-b ◽

1991 ◽

Vol 196 (2) ◽

pp. 351-360 ◽

Author(s):

C. Pavelescu ◽

C. Cobianu

Keyword(s):

Low Temperature ◽

Etch Rate ◽

Phosphosilicate Glass ◽

Rate Behaviour ◽

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A study of the properties of low temperature chemically vapour deposited phosphosilicate glass films

Thin Solid Films ◽

10.1016/0040-6090(88)90270-2 ◽

1988 ◽

Vol 161 ◽

pp. L71-L72 ◽

Author(s):

C. Pavelescu ◽

C. Cobianu ◽

N. Vlahovici ◽

C. Ghita

Keyword(s):

Low Temperature ◽

Phosphosilicate Glass ◽

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D.c. dielectric breakdown in phosphosilicate glass films prepared by low temperature chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(90)90518-i ◽

1990 ◽

Vol 186 (1) ◽

pp. L25-L28 ◽

Author(s):

Daniel Serghi ◽

Cristian Pavelescu

Keyword(s):

Low Temperature ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Dielectric Breakdown ◽

Chemical Vapour ◽

Phosphosilicate Glass ◽

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1 MHz dielectric constants of phosphosilicate glass films chemically vapour-deposited in the SiH4-PH3-O2-N2 system at low temperature

Journal of Materials Science ◽

10.1007/bf00540681 ◽

1992 ◽

Vol 27 (10) ◽

pp. 2631-2635

Author(s):

C. Pavelescu ◽

D. Serghi

Keyword(s):

Low Temperature ◽

Dielectric Constants ◽

Phosphosilicate Glass ◽

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A simple low-temperature laser-doping employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors

Thin Solid Films ◽

10.1016/s0040-6090(01)01404-3 ◽

2001 ◽

Vol 397 (1-2) ◽

pp. 4-7 ◽

Author(s):

Cheon-Hong Kim ◽

Sang-Hoon Jung ◽

Jae-Hong Jeon ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Low Temperature ◽

Borosilicate Glass ◽

Thin Film Transistors ◽

Laser Doping ◽

Phosphosilicate Glass ◽

Si Thin Film ◽

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Dry etching of low-temperature chemically vapour deposited phosphosilicate glass films in CF4-Q2 plasma

Journal of Materials Science Letters ◽

10.1007/bf00722774 ◽

1991 ◽

Vol 10 (12) ◽

pp. 703-705

Author(s):

R. Bantoiu ◽

C. Pavelescu ◽

V. Avramescu

Keyword(s):

Low Temperature ◽

Dry Etching ◽

Phosphosilicate Glass ◽

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Determination of phosphorus in borophosphosilicate or phosphosilicate glass films on a silicon wafer by wavelength-dispersive x-ray spectrometry

X-Ray Spectrometry ◽

10.1002/xrs.1300200507 ◽

1991 ◽

Vol 20 (5) ◽

pp. 255-261

Author(s):

Herman S. Levine ◽

Karen L. Higgins

Keyword(s):

Silicon Wafer ◽

X Ray ◽

Phosphosilicate Glass ◽

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Controllable Phosphorus Doped Graphene Field Effect Transistor Using Phosphosilicate-Glass Films

ECS Meeting Abstracts ◽

10.1149/ma2014-02/28/1568 ◽

2014 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Graphene Field Effect Transistor ◽

Doped Graphene ◽

Phosphosilicate Glass ◽

Effect Transistor ◽

Phosphorus Doped ◽

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Study of the annealing effect of low-temperature oxide on the etch rate in TMAH solutions for micro-heater applications

2009 IEEE 3rd International Conference on Nano/Molecular Medicine and Engineering ◽

10.1109/nanomed.2009.5559093 ◽

2009 ◽

Author(s):

Wen-Chie Huang ◽

Chung-Nan Chen ◽

Shang-Hung Shen ◽

Cheng-Chia Chen

Keyword(s):

Low Temperature ◽

Etch Rate ◽

Annealing Effect ◽

Temperature Oxide

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Thermally annealed phosphosilicate glass films deposited in the SiH4-PH3-O2-N2 system

Journal of Materials Science Letters ◽

10.1007/bf00721607 ◽

1990 ◽

Vol 9 (12) ◽

pp. 1435-1437

Author(s):

R. Bantoiu ◽

C. Pavelescu

Keyword(s):

Phosphosilicate Glass ◽

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High etch rate and low temperature InP backside via etching using HI-based inductively coupled plasma

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442826 ◽

2005 ◽

Author(s):

K. Kotani ◽

T. Kawasaki ◽

T. Miyazaki ◽

S. Yaegassi ◽

H. Yano

Keyword(s):

Low Temperature ◽

Inductively Coupled Plasma ◽

Etch Rate ◽

Inductively Coupled ◽

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