Effects of oxygen partial pressure on the crystallographic structure of Mn-Zn ferrite thin films deposited by ion beam sputtering

ABSTRACTWe investigated the effects of the substrate temperature (Ts) on the crystallization and the development of texture of Mn-Zn ferrite thin films on SiO2/Si (100) under ion bombardment during ion beam sputtering. As-deposited films showed ferrimagnetic properties in spite of their crystallographic structure of wustite. The crystallographic structure of as-deposited films changed from (111) wustite structure to (222) spinel structure as oxygen partial pressure increased. The (222) preferred orientation seems to originate from oxygen-deficit ambient and preferential resputtering of oxygen ions in films during sputtering. The interplanar distance of the films deposited without oxygen flow decreased with increasing Ts due to release of compressive stress. The saturation Magnetization (Ms) of the film had maximum value at about 275°C, while the resistivity was almost of the same value irrespective of Ts. The unusual fact that crystallization and preferred orientation were less progressed at higher Ts was discussed.

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Thickness dependence of the preferred orientation of Mn–Zn ferrite thin films deposited by ion‐beam sputtering

Journal of Applied Physics ◽

10.1063/1.360619 ◽

1995 ◽

Vol 78 (1) ◽

pp. 418-422 ◽

Cited By ~ 6

Author(s):

Hae Seok Cho ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Ion Beam ◽

Preferred Orientation ◽

Thickness Dependence ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Ferrite Thin Films

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(Mn,Zn,Fe)1−xO thin films showing ferrimagnetic property deposited by ion beam sputtering

Journal of Materials Research ◽

10.1557/jmr.1995.0274 ◽

1995 ◽

Vol 10 (2) ◽

pp. 274-279 ◽

Cited By ~ 5

Author(s):

Hae Seok Cho ◽

Sang Ki Ha ◽

Min Hong Kim ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Ion Beam ◽

Magnetic Moments ◽

Spinel Ferrite ◽

Oxygen Deficit ◽

Crystallographic Structure ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Deposited Films

We deposited (Mn,Zn,Fe)1−xO thin films of a wüstite structure on SiO2/Si(100) by ion beam sputtering using a single-crystal Mn-Zn ferrite target. The wüstite structure of the as-deposited film, confirmed by XRD, TEM, and XPS analysis, appeared to originate from an oxygen-deficit ambient and also from the preferential resputtering of the oxygen ions in films during deposition. The as-deposited films showed ferrimagnetic characteristics having quite a large Ms in spite of their crystallographic structure, wüstite. Such an unusual phenomenon is presumably due to the different magnetic moments of the constituent cations with disordered distribution. This wüstite phase could be transformed into the spinel ferrite phase with the same preferred orientation during postannealing under an appropriate oxygen partial pressure. The interplanar distance of the as-deposited films decreased with increasing Ts due to a release of compressive stress. The Ms of the film had a maximum value at about 275 °C, while the resistivity, mainly governed by the grain boundaries, was almost the same irrespective of Ts.

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Ion beam sputter deposition of YBa2Cu3O7−δ thin films

Journal of Materials Research ◽

10.1557/jmr.1993.3032 ◽

1993 ◽

Vol 8 (12) ◽

pp. 3032-3042 ◽

Cited By ~ 1

Author(s):

B.J. Kellett ◽

J.H. James

Keyword(s):

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Ion Beam ◽

High Oxygen ◽

Ion Beam Sputtering ◽

Film Properties ◽

High Oxygen Partial Pressure ◽

Beam Sputtering

This article addresses issues associated with in situ growth of superconducting YBa2Cu3O7−δ thin films by ion beam sputtering. High oxygen partial pressure during ion beam deposition can cause significant beam broadening and oxidation of filaments and grids. Also, many of the targets used for processing YBCO are unstable when sputtered in a high oxygen partial pressure. It is shown that ion beam sputtering can produce YBCO films of comparable quality to those produced by laser ablation or dc magnetron sputtering. Typical film properties are Tco = 91 K and Jc (77 K) = 106 A cm−2. It appears that the oxygen gas pressure during the postdeposition cooldown has a more important influence on film properties than the oxygen partial pressure during deposition.

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Effects of additives on the preferred orientation of Mn–Zn ferrite thin films deposited by ion beam sputtering

Applied Physics Letters ◽

10.1063/1.113270 ◽

1995 ◽

Vol 66 (10) ◽

pp. 1282-1284 ◽

Cited By ~ 6

Author(s):

Hae Seok Cho ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Ion Beam ◽

Preferred Orientation ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Ferrite Thin Films

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Structural and Ferroelectric Properties of Large c/a Phase Bismuth Ferrite Thin Films Prepared by Ion Beam Sputtering

MRS Proceedings ◽

10.1557/opl.2011.17 ◽

2011 ◽

Vol 1292 ◽

Author(s):

Seiji Nakashima ◽

Yosuke Tsujita ◽

Hironori Fujisawa ◽

Jung Min Park ◽

Takeshi Kanashima ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Domain Switching ◽

Ion Beam ◽

Ferroelectric Properties ◽

Mixed Phase ◽

Ion Beam Sputtering ◽

Beam Sputtering

ABSTRACTBiFeO3 (BFO) thin films have been deposited on SrRuO3/SrTiO3 (001) substrate by using ion beam sputtering process. At low oxygen partial pressure of 11 m Pa, rhombohedral and large c/a mixed phase thin film have been obtained in spite of rhombohedral BFO single phase formation at high oxygen partial pressure of 73 mPa. From wide area 2θ-Ψ mappings, diffraction peaks from large c/a phase BFO thin film were obtained with the same extinction rule as those of rhombohedral BFO. Reciprocal space mappings around BFO (003) and BFO (103) spots indicate that lattice parameters of large c/a phase BFO were a = 0.381 nm and c = 0.461 nm (c/a =1.22), respectively. Moreover ferroelectric domain switching could be observed in both of rhombohedral BFO and mixed phase BFO thin films.

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