Effects of additives on the preferred orientation of Mn–Zn ferrite thin films deposited by ion beam sputtering

ABSTRACTWe investigated the effects of the substrate temperature (Ts) on the crystallization and the development of texture of Mn-Zn ferrite thin films on SiO2/Si (100) under ion bombardment during ion beam sputtering. As-deposited films showed ferrimagnetic properties in spite of their crystallographic structure of wustite. The crystallographic structure of as-deposited films changed from (111) wustite structure to (222) spinel structure as oxygen partial pressure increased. The (222) preferred orientation seems to originate from oxygen-deficit ambient and preferential resputtering of oxygen ions in films during sputtering. The interplanar distance of the films deposited without oxygen flow decreased with increasing Ts due to release of compressive stress. The saturation Magnetization (Ms) of the film had maximum value at about 275°C, while the resistivity was almost of the same value irrespective of Ts. The unusual fact that crystallization and preferred orientation were less progressed at higher Ts was discussed.

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Effects of oxygen partial pressure on the crystallographic structure of Mn-Zn ferrite thin films deposited by ion beam sputtering

Surface and Coatings Technology ◽

10.1016/0257-8972(94)90174-0 ◽

1994 ◽

Vol 68-69 ◽

pp. 279-284 ◽

Cited By ~ 3

Author(s):

Hae Seok Cho ◽

Sang Ki Ha ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Ion Beam ◽

Crystallographic Structure ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Ferrite Thin Films

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Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering

Journal of Applied Physics ◽

10.1063/1.2197287 ◽

2006 ◽

Vol 99 (11) ◽

pp. 113519 ◽

Cited By ~ 90

Author(s):

G. Abadias ◽

Y. Y. Tse ◽

Ph. Guérin ◽

V. Pelosin

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Ion Beam ◽

Preferred Orientation ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Tin Thin Films ◽

Dual Ion Beam Sputtering

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(Mn,Zn,Fe)1−xO thin films showing ferrimagnetic property deposited by ion beam sputtering

Journal of Materials Research ◽

10.1557/jmr.1995.0274 ◽

1995 ◽

Vol 10 (2) ◽

pp. 274-279 ◽

Cited By ~ 5

Author(s):

Hae Seok Cho ◽

Sang Ki Ha ◽

Min Hong Kim ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Ion Beam ◽

Magnetic Moments ◽

Spinel Ferrite ◽

Oxygen Deficit ◽

Crystallographic Structure ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Deposited Films

We deposited (Mn,Zn,Fe)1−xO thin films of a wüstite structure on SiO2/Si(100) by ion beam sputtering using a single-crystal Mn-Zn ferrite target. The wüstite structure of the as-deposited film, confirmed by XRD, TEM, and XPS analysis, appeared to originate from an oxygen-deficit ambient and also from the preferential resputtering of the oxygen ions in films during deposition. The as-deposited films showed ferrimagnetic characteristics having quite a large Ms in spite of their crystallographic structure, wüstite. Such an unusual phenomenon is presumably due to the different magnetic moments of the constituent cations with disordered distribution. This wüstite phase could be transformed into the spinel ferrite phase with the same preferred orientation during postannealing under an appropriate oxygen partial pressure. The interplanar distance of the as-deposited films decreased with increasing Ts due to a release of compressive stress. The Ms of the film had a maximum value at about 275 °C, while the resistivity, mainly governed by the grain boundaries, was almost the same irrespective of Ts.

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