Sediment transport modeling in non-deposition with clean bed condition using different tree-based algorithms

To reduce the problem of sedimentation in open channels, calculating flow velocity is critical. Undesirable operating costs arise due to sedimentation problems. To overcome these problems, the development of machine learning based models may provide reliable results. Recently, numerous studies have been conducted to model sediment transport in non-deposition condition however, the main deficiency of the existing studies is utilization of a limited range of data in model development. To tackle this drawback, six data sets with wide ranges of pipe size, volumetric sediment concentration, channel bed slope, sediment size and flow depth are used for the model development in this study. Moreover, two tree-based algorithms, namely M5 rule tree (M5RT) and M5 regression tree (M5RGT) are implemented, and results are compared to the traditional regression equations available in the literature. The results show that machine learning approaches outperform traditional regression models. The tree-based algorithms, M5RT and M5RGT, provided satisfactory results in contrast to their regression-based alternatives with RMSE = 1.184 and RMSE = 1.071, respectively. In order to recommend a practical solution, the tree structure algorithms are supplied to compute sediment transport in an open channel flow.

Engineering Method for Tailoring Electrical Characteristics in TiN/TiOx/HfOx/Au Bi-Layer Oxide Memristive Devices

Memristive devices have led to an increased interest in neuromorphic systems. However, different device requirements are needed for the multitude of computation schemes used there. While linear and time-independent conductance modulation is required for machine learning, non-linear and time-dependent properties are necessary for neurobiologically realistic learning schemes. In this context, an adaptation of the resistance switching characteristic is necessary with regard to the desired application. Recently, bi-layer oxide memristive systems have proven to be a suitable device structure for this purpose, as they combine the possibility of a tailored memristive characteristic with low power consumption and uniformity of the device performance. However, this requires technological solutions that allow for precise adjustment of layer thicknesses, defect densities in the oxide layers, and suitable area sizes of the active part of the devices. For this purpose, we have investigated the bi-layer oxide system TiN/TiOx/HfOx/Au with respect to tailored I-V non-linearity, the number of resistance states, electroforming, and operating voltages. Therefore, a 4-inch full device wafer process was used. This process allows a systematic investigation, i.e., the variation of physical device parameters across the wafer as well as a statistical evaluation of the electrical properties with regard to the variability from device to device and from cycle to cycle. For the investigation, the thickness of the HfOx layer was varied between 2 and 8 nm, and the size of the active area of devices was changed between 100 and 2,500 µm2. Furthermore, the influence of the HfOx deposition condition was investigated, which influences the conduction mechanisms from a volume-based, filamentary to an interface-based resistive switching mechanism. Our experimental results are supported by numerical simulations that show the contribution of the HfOx film in the bi-layer memristive system and guide the development of a targeting device.

The aggradation process of transversal dunes since late-Pleistocene in Badain Jaran Desert, northwest China revealed by OSL dating

<p>Transversal dunes are widespread in many deserts, but the application of these un-stabilized dunes in the palaeoclimate region is limited. Because transversal dunes normally migrate too fast, which means this kind of dune has a low possibility to record long period paleoclimate information. Nevertheless, both model simulations and field observation demonstrate that larger (higher) dunes containing a greater mass of sand have longer turn-over times. If so, there may be particular giant transversal dunes, in which long periods of climate changes are actually preserved and could be used as geoproxy to reconstruct paleoenvironment changes.</p><p>The Badain Jaran desert, situated in north-western China, features the tallest dunes (about 480 m) on the earth. More than 50% of the sand sea is covered by transversal dunes with an average height of 200 to 300 m. Here, we investigated two representative mega-dunes in the center of the desert and took 22 OSL samples systematically to try to reconstruct the deposition history of these two mega-dunes. Our result demonstrates that one of the dunes is formed since ~62 ka, with two phases of superposed dunes dated to 26~32 ka and modern time. Another mage-dune started to deposited from 29 ka and climbed by early to middle Holocene superposed-dunes and modern ones. Furthermore, while other active sand seas preserve scarcely aeolian sand deposited during the LGM period (Last Glacial Maximum: 26.5-19.0 ka BP), 11 of our 22 OSL dating results fall into the LGM period, which indicates that mega-dunes in the Badain Jaran desert continue aggradation during LGM. In that case，we speculate there are at least three factors facilitating the mega-dunes in Badain Jaran desert different from other transversal dunes that can preserve LGM sediments. (1) Badain Jaran desert, situated in a relatively subsiding basin, has a favor deposition condition; (2) The desert is close to the aeolian sand provenance area, an alluvial fan stored abundant silt-sand material derived from the southeast Tibet; (3) the shallow buried wet sand in Badain Jaran desert may promote the formation of the mega-dunes and reduce their migration speed, so that extend the turn-over times of the mega-dunes.</p>

Reversible 100 mA Current Switching in a VO2/Al2O3-Based Two-Terminal Device Using Focused Far-Infrared Laser Pulses

In this study, we implemented reversible current switching (RCS) of 100 mA in a two-terminal device based on a vanadium dioxide (VO2) thin film, which could be controlled by far-infrared (FIR) laser pulses. The VO2 thin films used for fabrication of two-terminal devices were grown on sapphire (Al2O3) substrates using a pulsed laser deposition method. An optimal deposition condition was determined by analyzing the resistance-temperature curves of deposited VO2 thin films and the current–voltage characteristics of two-terminal devices based on these films, which were suggested in our previous works. The film surface of the VO2-based device was directly irradiated using focused CO2 laser pulses, and the insulator-metal transition or metal-insulator transition of the VO2 thin film could be triggered depending on laser irradiation. Consequently, RCS of up to 100 mA could be accomplished. This on-state current is close to the upper limit of the current flowing through our VO2 device. The switching contrast, defined as the ratio between on-state and off-state currents, was evaluated and found to be ˜11,962. The average rising and falling times of the switched current were found to be ˜29.2 and ˜71.7 ms, respectively. In comparison with our previous work, the improved heat dissipation structure and the high-quality thin film could maintain the switching contrast at a similar level, although the on-state current was increased by about two times.

Micro Composite Multi Structural Formable Steel: Optimization of Electrodeposition Parameters and Anti-corrosion Properties of Polypyrrole Coatings

Polypyrrole (PPy) doped with 2-acrylamido-2-methyl-1-propanesulfonic acid sodium salt (AMPSNa) coating was electrochemically deposited MMFX steel by chronopotentiometry technique. The effect of concentration of AMPSNa, the applied current density, and deposition time on corrosion protection efficiency were investigated. The corrosion protection ability of the PPy/AMPSNa coating was studied using polarization curves and electrochemical impedance spectroscopy (EIS) after the electrodes had been immersed in a 0.6 M NaCl solution. PPy films were characterized by infrared spectroscopy and scanning electron microscopy. The results showed that PPy /AMPSNa coating has a cauliflower-like nodular surface and a uniformly thin layer covering the surface. With electrochemically deposition condition 0.03 M AMPSNa, 2 mA/cm2 for 7.5 min. the PPy coatings tended to exhibit better corrosion protection ability.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

Electrical and Optical Properties of Al-Doped ZnO Transparent Conductive Oxide Films Prepared via Radio Frequency Magnetron Co-Sputtering System

In this study, the optical and electrical properties of a transparent conductive oxide (TCO) film synthesized via the radio frequency (RF) magnetron co-sputtering of Al-doped ZnO (AZO) and ZnO targets on a glass substrate were investigated. In the visible region, the resistivity, transmittance, and carrier concentration of the TCO film are influenced by the ratio of Al doping. The samples were prepared using two targets with the same deposition condition, except several different power levels on an AZO target to obtain different Al compositions in the film. The power range was 100–160 W in 20 W steps on the AZO target with a constant 50 W power level on the ZnO target. The electrical and optical characteristics of the film were measured using several apparatuses. The cross-section of the films was measured with via field emission scanning electron microscopy (FESEM) to determine the thickness of the film. The electrical and optical properties of the AZO films were measured via Hall measurement and UV-visible spectroscopy. The structural characteristics of the AZO films were confirmed by Raman spectroscopy.