(Mn,Zn,Fe)1−xO thin films showing ferrimagnetic property deposited by ion beam sputtering

We deposited (Mn,Zn,Fe)1−xO thin films of a wüstite structure on SiO2/Si(100) by ion beam sputtering using a single-crystal Mn-Zn ferrite target. The wüstite structure of the as-deposited film, confirmed by XRD, TEM, and XPS analysis, appeared to originate from an oxygen-deficit ambient and also from the preferential resputtering of the oxygen ions in films during deposition. The as-deposited films showed ferrimagnetic characteristics having quite a large Ms in spite of their crystallographic structure, wüstite. Such an unusual phenomenon is presumably due to the different magnetic moments of the constituent cations with disordered distribution. This wüstite phase could be transformed into the spinel ferrite phase with the same preferred orientation during postannealing under an appropriate oxygen partial pressure. The interplanar distance of the as-deposited films decreased with increasing Ts due to a release of compressive stress. The Ms of the film had a maximum value at about 275 °C, while the resistivity, mainly governed by the grain boundaries, was almost the same irrespective of Ts.

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Effects of the Substrate Temperature on the Crystallization and Development of Texture of Mn-Zn Ferrite thin Films Deposited by Ion Beam Sputtering

MRS Proceedings ◽

10.1557/proc-317-541 ◽

1993 ◽

Vol 317 ◽

Cited By ~ 1

Author(s):

Hae Seok Cho ◽

Sang Ki Ha ◽

Min Hong Kim ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Ion Beam ◽

Preferred Orientation ◽

Crystallographic Structure ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Ferrite Thin Films ◽

Deposited Films

ABSTRACTWe investigated the effects of the substrate temperature (Ts) on the crystallization and the development of texture of Mn-Zn ferrite thin films on SiO2/Si (100) under ion bombardment during ion beam sputtering. As-deposited films showed ferrimagnetic properties in spite of their crystallographic structure of wustite. The crystallographic structure of as-deposited films changed from (111) wustite structure to (222) spinel structure as oxygen partial pressure increased. The (222) preferred orientation seems to originate from oxygen-deficit ambient and preferential resputtering of oxygen ions in films during sputtering. The interplanar distance of the films deposited without oxygen flow decreased with increasing Ts due to release of compressive stress. The saturation Magnetization (Ms) of the film had maximum value at about 275°C, while the resistivity was almost of the same value irrespective of Ts. The unusual fact that crystallization and preferred orientation were less progressed at higher Ts was discussed.

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Effects of oxygen partial pressure on the crystallographic structure of Mn-Zn ferrite thin films deposited by ion beam sputtering

Surface and Coatings Technology ◽

10.1016/0257-8972(94)90174-0 ◽

1994 ◽

Vol 68-69 ◽

pp. 279-284 ◽

Cited By ~ 3

Author(s):

Hae Seok Cho ◽

Sang Ki Ha ◽

Hyeong Joon Kim

Keyword(s):

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Ion Beam ◽

Crystallographic Structure ◽

Ion Beam Sputtering ◽

Zn Ferrite ◽

Beam Sputtering ◽

Ferrite Thin Films

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In-Situ Real-Time Ellipsometry Study of Dynamic Processes of YBa2Cu3O7−x Thin Films

MRS Proceedings ◽

10.1557/proc-569-77 ◽

1999 ◽

Vol 569 ◽

Cited By ~ 1

Author(s):

Y. Gao ◽

A.H. Mueller ◽

E.A. Irene ◽

O. Auciello ◽

A.R. Krauss ◽

...

Keyword(s):

Thin Films ◽

Real Time ◽

Ion Beam ◽

Oxygen Deficiency ◽

Ion Beam Sputtering ◽

Optical Absorption Peak ◽

Beam Sputtering ◽

Effect Of Oxygen ◽

Deposited Films

ABSTRACTThe optical absorption peak at 4. leV associated with oxygen deficiency in YBa2Cu3O7−x thin films was monitored by spectroscopic ellipsometry (SE) in real time during the growth process. Two regimes dominated by oxygen out- and in-diffusion have been observed during deposition by ion beam sputtering at 700°C.The effect of oxygen partial pressure during the post-deposition cooling process on the oxidation of deposited films has also been investigated. The thermodynamic stability of the grown films was examined by real time SE during post annealing process. In-situ SE measurements have been performed to obtain the dielectric function of oxygen deficient YBa2Cu3O6 films in the temperature range from 27°C to 700°C. It has been demonstrated that real time SE is a sensitive and useful technique for in-situ diagnostics of the dynamics of YBa2Cu3O7−x thin film processes.

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