High efficiency p+-n-n+ back-surface field silicon solar cells with very large short-circuit current densities

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

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Investigation of thin aluminium films on the rear of monocrystalline silicon solar cells for back surface field formation

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. ◽

10.1109/pvsc.2002.1190470 ◽

2003 ◽

Cited By ~ 3

Author(s):

O.N. Hartley ◽

R. Russell ◽

K.C. Heasman ◽

N.B. Mason ◽

T.M. Bruton

Keyword(s):

Solar Cells ◽

Monocrystalline Silicon ◽

Silicon Solar Cells ◽

Back Surface ◽

Back Surface Field ◽

Surface Field ◽

Field Formation

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High-efficiency monolithic InGaP/GaAs tandem solar cells with improved top-cell back-surface-field layers

Seventh International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1995.522193 ◽

2002 ◽

Cited By ~ 2

Author(s):

H. Kurita ◽

T. Takamoto ◽

E. Ikeda ◽

M. Ohmori

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Back Surface ◽

Tandem Solar Cells ◽

Back Surface Field ◽

Surface Field

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Numerical Study of TCO/Silicon Solar Cells with Novel Back Surface Field

Journal of Electronic Materials ◽

10.1007/s11664-016-4419-3 ◽

2016 ◽

Vol 45 (8) ◽

pp. 3929-3934 ◽

Cited By ~ 7

Author(s):

M. Boumaour ◽

S. Sali ◽

A. Bahfir ◽

S. Kermadi ◽

L. Zougar ◽

...

Keyword(s):

Solar Cells ◽

Numerical Study ◽

Silicon Solar Cells ◽

Back Surface ◽

Back Surface Field ◽

Surface Field

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The Effect of Al-BSF on Seff and Rb in Industrialized Mono-Silicon Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.472-475.1846 ◽

2012 ◽

Vol 472-475 ◽

pp. 1846-1850

Author(s):

Shan Shan Dai ◽

Gao Jie Zhang ◽

Xiang Dong Luo ◽

Jing Xiao Wang ◽

Wen Jun Chen ◽

...

Keyword(s):

Solar Cells ◽

Spectral Response ◽

Short Circuit ◽

Rear Surface ◽

Surface Recombination ◽

Short Circuit Current ◽

Open Circuit ◽

Surface Recombination Velocity ◽

Silicon Solar Cells ◽

Back Surface

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.

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