scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

2019 ◽  
Vol 126 (1) ◽  
Author(s):  
Syed Asfandyar Ali Kazmi ◽  
Aimal Daud Khan ◽  
Adnan Daud Khan ◽  
Abdul Rauf ◽  
Waqas Farooq ◽  
...  

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Nowshad Amin ◽  
M. A. Matin ◽  
M. M. Aliyu ◽  
M. A. Alghoul ◽  
M. R. Karim ◽  
...  

Polycrystalline CdTe shows greater promises for the development of cost-effective, efficient, and reliable thin film solar cells. Results of numerical analysis using AMPS-1D simulator in exploring the possibility of ultrathin, high efficiency, and stable CdS/CdTe cells are presented. The conventional baseline case structure of CdS/CdTe cell has been explored with reduced CdTe absorber and CdS window layer thickness, where 1 μm thin CdTe and 50 nm CdS layers showed reasonable efficiencies over 15%. The viability of 1 μm CdTe absorber layer together with possible back surface field (BSF) layers to reduce minority carrier recombination loss at the back contact in ultra thin CdS/CdTe cells was investigated. Higher bandgap material like ZnTe and low bandgap materials like Sb2Te3and As2Te3as BSF were inserted to reduce the holes barrier height in the proposed ultra thin CdS/CdTe cells. The proposed structure of SnO2/Zn2SnO4/CdS/CdTe/As2Te3/Cu showed the highest conversion efficiency of 18.6% (Voc= 0.92 V,Jsc= 24.97 mA/cm2, and FF = 0.81). However, other proposed structures such as SnO2/Zn2SnO4/CdS/CdTe/Sb2Te3/Mo and SnO2/Zn2SnO4/CdS/CdTe/ZnTe/Al have also shown better stability at higher operating temperatures with acceptable efficiencies. Moreover, it was found that the cells normalized efficiency linearly decreased with the increased operating temperature with relatively lower gradient, which eventually indicates better stability of the proposed ultra thin CdS/CdTe cells.


Solar Cells ◽  
1982 ◽  
Vol 7 (3) ◽  
pp. 331-336 ◽  
Author(s):  
J. Nijs ◽  
J. Van Meerbergen ◽  
F. D'Hoore ◽  
R. Mertens ◽  
R. Van Overstraeten

2003 ◽  
Vol 42 (Part 1, No. 9A) ◽  
pp. 5397-5404 ◽  
Author(s):  
Toshio Joge ◽  
Ichiro Araki ◽  
Tsuyoshi Uematsu ◽  
Terunori Warabisako ◽  
Hiroshi Nakashima ◽  
...  

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