ABSTRACTSputter Initiated Resonance Ionization Spectroscopy (SIRIS) is a technique being developed by Atom Sciences, Inc. to perform ultrasensitive elemental analysis of materials. SIRIS uses sputtering to atomize a solid sample and resonance ionization (RIS) to selectively ionize an element of interest. The SIRIS technique is capable of detecting impurities at the 0.1 ppb level (5 × 1012/cm 3) in a routine analysis time of 5 minutes. RIS and the SIRIS technique are briefly reviewed. We report a detection efficiency for SIRIS of 2 ppb sensitivity and recent results are given for standard well-characterized samples of boron-doped silicon. Current progress is described for the development of depth profiling and the analysis of silicon in gallium arsenide. The SIRIS detection of silicon in standard reference materials certified by NBS is presented.
Atom-at-a-time laser resonance ionization spectroscopy of nobelium
