Ultrasensitive Elemental Analysis of Materials Using Sputter Initiated Resonance Ionization Spectroscopy

1985 ◽  
Vol 48 ◽  
Author(s):  
J. E. Parks ◽  
D. W. Beekman ◽  
H. W. Schmitt ◽  
M. T. Spaar
Keyword(s):  
Gallium Arsenide ◽  
Reference Materials ◽  
Elemental Analysis ◽  
Detection Efficiency ◽  
Depth Profiling ◽  
Standard Reference Materials ◽  
Resonance Ionization ◽  
Resonance Ionization Spectroscopy ◽  
Boron Doped ◽  
Doped Silicon

ABSTRACTSputter Initiated Resonance Ionization Spectroscopy (SIRIS) is a technique being developed by Atom Sciences, Inc. to perform ultrasensitive elemental analysis of materials. SIRIS uses sputtering to atomize a solid sample and resonance ionization (RIS) to selectively ionize an element of interest. The SIRIS technique is capable of detecting impurities at the 0.1 ppb level (5 × 1012/cm 3) in a routine analysis time of 5 minutes. RIS and the SIRIS technique are briefly reviewed. We report a detection efficiency for SIRIS of 2 ppb sensitivity and recent results are given for standard well-characterized samples of boron-doped silicon. Current progress is described for the development of depth profiling and the analysis of silicon in gallium arsenide. The SIRIS detection of silicon in standard reference materials certified by NBS is presented.

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

1995 ◽  
Vol 157 (1-4) ◽  
pp. 109-112 ◽  
Author(s):  
E. Basaran ◽  
C.P. Parry ◽  
R.A. Kubiak ◽  
T.E. Whall ◽  
E.H.C. Parker
Keyword(s):  
Depth Profiling ◽  
Electrochemical Capacitance ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Doped Silicon

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells
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